Approaches of optimization of coupled quantum wells with pronounced quantum-confined Stark effect in order to reach a high refractive index change are described. A numerical simulation was used to determine the optimal design parameters (quantum well width, barrier thickness and composition) based on GaAs/AlGaAs materials with two symmetric quantum wells, which provides the maximum modulation of the refractive index at a small absorption coefficient. It is demonstrated that, with the electric field strength varied within the range 0-20 kV cm −1 at an optical loss for interband absorption not exceeding 10 cm −1 , the refractive index can be changed by up to 0.0362.
An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p-n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.
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