On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

Slipchenko, S. O.; Podoskin, A. A.; Vasil’eva, V. V.; Pikhtin, N. A.; Rozhkov, A. V.; Gorbatyuk, A. V.; Zolotarev, V. V.; Veselov, D. A.; Jabotinskii, A. V.; Petukhov, Alexey; Tarasov, I. S.; Bagaev, T. A.; Zverkov, M V; Konyaev, V P; Kurniavko, Y. V.; Ладугин, М. А.; Lobintsov, A. V.; Маrmalyuk, А. А.; Падалица, А. А.; Симаков, В. А.

doi:10.1134/s1063782614050224

Cited by 18 publications

(8 citation statements)

References 4 publications

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“…This is due to the wide range of operating currents of the laserthyristor and to the specific design features of particular active regions. It was shown in [23,25] that the control current density providing an effective turn-on of the laser-thyristor is in the range from tens of μA cm −2 to hundreds of A cm −2 , with the current density in the ON-state possibly exceeding 50 kA cm −2 . It is substantially higher than typical threshold current densities for the laser part design under study (with threshold current densities of 300-600 A cm −2 ).…”

Section: Results Of Experimental Studymentioning

confidence: 99%

“…For switches based on field-effect and bipolar transistors, the dynamics of the control signal determines their transient characteristics, and, as a result, the so-called drivers generating a signal with required power-and time-related parameters are an irreplaceable part of the circuit. For effective operation of a laser-thyristor, the control signal should have substantially lower peak powers and energies, compared with the power signal being switched (or generated) [25].…”

Section: Introductionmentioning

confidence: 99%

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Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Podoskin

Soboleva

Zakharov

et al. 2015

Semicond. Sci. Technol.

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An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p-n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.

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Section: Results Of Experimental Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Podoskin

Soboleva

Zakharov

et al. 2015

Semicond. Sci. Technol.

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“…We used a laser heterostructure with a narrow waveguide as the most technologically convenient solution providing a high emission efficiency at short cavity lengths for peak optical power of 40-50 W [9]. Unlike the heterostructure described in previous works [5], [6], the studied heterostructure provided spontaneous emission absorption only in the p-base region of the heterophototransistor. This was achieved by excluding the n-GaAs layer from the collector region.…”

Section: Experimental Samplesmentioning

confidence: 99%

“…A low-voltage thyristor heterostructure was used as a current switch. As a result, 10-100 mA low signal current control has been demonstrated, which is used to generate laser pulses on the order of 100 ns and up to 28 W output optical power [5], [6]. The results of a detailed study of the output characteristics of lasersthyristors, reported in [8], demonstrated a strong nonlinearity of the dynamics of radiative processes.…”

Section: Introductionmentioning

confidence: 99%

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

Slipchenko

Podoskin

Rozhkov

et al. 2015

IEEE Photon. Technol. Lett.

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This letter shows an experimentally studied approach that increases injection efficiency of high-power laser thyristors emitting in the 890-910 nm spectral band. The developed laser thyristors exhibit 43-W maximum peak output power of laser pulses at 95-nm full width at half maximum duration. At the same time, the maximum amplitude of the current pulse generated in the laser-thyristor circuit reached 90 A.Index Terms-Laser-thyristor, semiconductor laser, thyristor heterostructure.

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“…The high-power laser-thyristor (LT) under study is a new semiconductor device epitaxially combining a stripe-geometry laser diode and an n-p-n transistor serving as a photoinitiated current switch (n-collector of the phototransistor part is the N-emitter for the laser diode) [11,12]. A distinctive feature of the device is the low control current density in the range from several to hundreds of A/cm 2 , which provides switch-on of pumping pulses for the laser part, with amplitude of tens of amperes and width of tens of nanoseconds [13,14].…”

Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50-1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30-40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm −2 , and the energy absorbed in the p-GaAs base during the control pulse was 43-47 pJ.

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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

Cited by 18 publications

References 4 publications

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

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