Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation Growth of (111)B-oriented resonant tunneling devices in a gas source molecular beam epitaxy system