A new multiple-stripe injection laser has been developed. By fabricating a stripe array of buried heterostructures configured to operate in leaky modes, strong coupling is produced between the stripes leading to linear operation and stable output characteristics. Efficient utilization of the total emitting area results from leaky-mode operation, and peak pulsed output powers to 1.5 W have been observed.
The lateral refractive index step Δn in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity-induced disordering is determined. Δn is found to depend on polarization and wavelength, increasing towards the active-layer band gap. The lateral index step can be as large as 4×10−2 for a Zn disordered waveguide device at 875 nm. A strong birefringence of the waveguiding characteristics is observed leading to an antiguiding behavior of TM-polarized light for wavelengths sufficiently below the band gap.
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