A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures

Lengyel, G.; Jelley, K.W.; Engelmann, R.W.H.

doi:10.1109/3.44961

Cited by 65 publications

(20 citation statements)

References 16 publications

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“…where E is the electric field prependeculr to the layer, E a1 is first heavy hole excitonic peak in absorption spectrum, Γ hh is the HWHM of the line shape function, and α hh is expressed as follows [10] Fig. 4 Step response of QW-OEID: a) amplification mode, b) switching mode.…”

Section: Computing the Qw-hpt Optical Conversion Gainmentioning

confidence: 99%

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Sheikhi

Ahmadi

Morravej‐Farshi

et al. 2003

phys. stat. sol. (c)

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A physical model for the characteristics of a voltage-tunable optoelectronic integrated functional device is outlined. The device consists in a vertical and direct integration of a quantum well structure heterojunction phototransistor (QW-HPT) over a QW laser diode. Based on the model, transient response of the device is analyzed numerically. The model derives two different modes of operation for the device: amplification mode for small, and switching mode for high optical feedback. IntroductionThe optoelectronic integrated device (OEID) which exhibits multifunctions such as optical amplification, bistability, and switching is of great interest in optoelectronic integrated circuits (OEIC). This device is considered to be the key element in the areas of fiber-optic communication systems, optical switching, and optical computation systems. A vertical and direct integration of a lightdetecting and light-emitting device, such as a heterojunction phototransistor (HPT) and a laser diode (LD) is an effective method to obtain an optoelectronic integrated device [1][2][3]. The operation of the device can be explained as follows: the input light is converted to photo-generated carriers through the light-detecting device, which drives the LD to on state. Integration of HPT over LD gives rise to new phenomena such as internal electrical and optical feedback between LD and HPT, which have been utilized to get new functions such as optical amplifier, optical switch, and optical bistable.Previously, we have presented a physical model for the operation of an HPT/LD OEID [4,5]. Based on this model, the dynamic and static response of a conventional OEID was numerically analyzed. The aim of this work is to improve and enhance the performance of the device and also to provide some more optical functions. For that purpose we propose a quantum well structure OEID (QW-OEID) monolithically integrated by a quantum well structure HPT with n-p-i-n configuration over a quantum well laser diode (QW-LD). This QW-OEID is a voltage tunable functional device. A physical model for the operation of QW-OEID is developed to investigate quantitatively the dynamic response of the device and its output characteristics. In Section 2, the structure and operation of the device are studied. The physical model and the theory of the numerical analysis of the QW-OEID are presented in Section 3. The results of the numerical analysis and the conclusion are brought in Sections 4 and 5, respectively.

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Section: Computing the Qw-hpt Optical Conversion Gainmentioning

confidence: 99%

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Sheikhi

Ahmadi

Morravej‐Farshi

et al. 2003

phys. stat. sol. (c)

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“…The above procedure is repeated to compute Dz i , V, G, and N. and the temperature is T = 300 K. Also, the electronic intraband relaxation time W a that determines the spectral width of the optical absorption is related to the scattering time of the exciton state. An empirical equation [13] is used in which the scattering effect due to the roughness of the single well interface is added to the effects of scattering excitons and electrons by phonons. In the above, the L z is in nanometers while % / W a is in milli-electron-volts.…”

Section: Analytical Proceduresmentioning

confidence: 99%

“…Design and analysis of the conventional optical modulator uses a spectral line shape function of Lorentz type, taking into account only the electronic intraband relaxation time [13]. The theoretical analysis of the absorption spectrum by the QCSE effect does not necessarily agree well with the experimental data.…”

Section: Introductionmentioning

confidence: 99%

Design of a surface-illuminated-type semiconductor optical modulator with multi-quantum-well structures

Kuwamura¹,

Nishiuma²,

Yamada³

2000

Electron. Comm. Jpn. Pt. II

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A surface‐transmission‐type semiconductor optical modulator using multi‐quantum‐well structures is designed. In order to realize a high extinction ratio and a low insertion loss with a lower driving voltage, a structure is proposed in which the voltage is applied in the transverse direction of the quantum well by means of comb‐shaped conductive layers. The thickness of each layer is discussed. As an example of theoretical design with optimum conditions, a device structure realizing an extinction ratio between 10 and 20 dB and an insertion loss of 2 dB at a driving voltage of 5 V is presented. A high operating speed, up to several gigahertz, can be expected in a device with a surface area of 20 × 20 μm2. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(5): 28–39, 2000

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“…However, the tunneling becomes negligible in the V-QWR's with wide well widths or in weak electric fields. 12 The ͑quasi͒ bound states exist in the V-QWR. To be consistent with the limitation of weak electric fields, the effect of the electric fields on the electron states of the V-QWR can be analyzed by the above perturbation method, where the applied electric field is considered as a perturbation of the Hamiltonian, while the bound states of the V-QWR are expanded with the eigenwave functions in the zero electric fields.…”

Section: ͑4͒mentioning

confidence: 99%

Electronic states of V-shaped semiconductor quantum wires in electric fields

Sun

1998

Phys. Rev. B

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A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures

Cited by 65 publications

References 16 publications

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Design of a surface-illuminated-type semiconductor optical modulator with multi-quantum-well structures

Electronic states of V-shaped semiconductor quantum wires in electric fields

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