Bias dependence of GaAs and InP MESFET parameters

Engelmann, R.W.H.; Liechti, C.A.

doi:10.1109/t-ed.1977.19000

Cited by 81 publications

(6 citation statements)

References 18 publications

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“…The e®ect was predicted by Camnitz and Moll 27 , and¯rst experimentally observed by Betser and Ritter 26 . Similar e®ects have been observed in MESFETs 28 . In III-V materials at high¯elds, electron velocity v(E) decreases with increasing electric¯eld.…”

Section: Secondary E®ects In F Maxsupporting

confidence: 83%

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Rodwell

Urteaga

Betser

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer processes, or -if contact resistivity is greatly reduced -by reducing the width of the base Ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f max and high gains in mm-wave ICs. Logic gate delays are primarily set by depletion-layer charging times, and neither fτ nor f max is indicative of logic speed. For high speed logic, epitaxial layers must be thinned, emitter and collector junction widths reduced, current density increased, and emitter parasitic resistance decreased. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f max is 1.1 THz. Transferred-substrate HBTs have obtained 295 GHz f τ . Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz, 66 GHz master-slave flip-flops, and 18 GHz clock rate Δ-Σ ADCs.

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Section: Secondary E®ects In F Maxsupporting

confidence: 83%

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Rodwell

Urteaga

Betser

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

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“…Appl. 17 (1982) [1,2]. A great improvement of this type of device has been obtained inserting a very thin oxide layer between the metal and the semiconductor substrate [3,4].…”

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confidence: 99%

n ITO/p InP : a photo and electroluminescent diode

Gouskov

Luquet

Gril

et al. 1982

Rev. Phys. Appl. (Paris)

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“…This model [14] does not account for the observed variation of gds in our data. An expression for Gu of an intrinsic MESFET using the model of (11 from [15] is (4) and the unilateral gain rook off at a rate of 6dB/octave. Figure 4 plots Gu from the device S parameters for the example in (31 for the cases where the parasitic inductances ( L g , L,.…”

Section: Discussionmentioning

confidence: 99%

“…In comparison, the joint Fourier transform correlator (JTC) is capable of realtime matching and tracking operations without prior knowledge of the target, and so no complex filter fabrication is necessary [l-61. To enhance the performance of classical JTC, Javidi and Kuo [4] proposed the binary JTC in which the joint power spectrum (JPS) is binarized based on a suitable threshold before applying the inverse Fourier transform operation, When the threshold of the JPS approaches the median value of the JPS, the correlation output is found to have reasonable improvement over the classical JTC in terms of the correlation peak intensity, correlation width, and optical efficiency. In fact, the success of the binary JTC primarily depends on the selection of the threshold value.…”

Section: Introductionmentioning

confidence: 99%

Modeling of gunn domain effects in the output conductance of the high‐frequency small‐signal GaAs MESFET equivalent circuit

Magerko

Chang

1992

Micro & Optical Tech Letters

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A time‐delay element associated with the output conductance has been included in the small‐signal GaAs MESFET equivalent circuit to model Gunn domain effects. From experimental data collected to 36 GHz, these effects primarily contribute to decrease of the output conductance (gds) with increasing frequency which significantly affects the magnitude of the S‐parameter S22. © 1992 John Wiley & Sons, Inc.

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Bias dependence of GaAs and InP MESFET parameters

Cited by 81 publications

References 18 publications

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

n ITO/p InP : a photo and electroluminescent diode

Modeling of gunn domain effects in the output conductance of the high‐frequency small‐signal GaAs MESFET equivalent circuit

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