Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra

Arzhanov, E V; Bogatov, Alexandr P; Konyaev, V P; Nikitina, O.M.; Shveĭkin, V I

doi:10.1070/qe1994v024n07abeh000144

Cited by 39 publications

(20 citation statements)

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“…The multiplicity of spectral peaks in the laser with the thinner clad ͑2.5 m͒ was identified in an earlier publication 24 as spectral modulation caused by leakage of the guided mode into the substrate. 25,26 A calculated modulation period of 25-30 nm calculated for the relevant substrate thicknesses is consistent with the observed spectra shown in Fig. 4.…”

Section: Laser Characterizationsupporting

confidence: 73%

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Canedy¹,

Boishin²,

Bewley³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We explored the evolution of the photoluminescence ͑PL͒ properties versus molecular beam epitaxy growth conditions for a series of type II ''W'' quantum well ͓InAs/GaInSb/InAs/AlAsSb͔ structures. The highest PL intensities are obtained when the quantum wells are grown in a temperature range between 487 and 507°C. Cross-sectional scanning tunneling microscopy was used to explain the temperature evolution of the PL. AlAs clustering within the AlAsSb barrier was observed at low growth temperature. The PL intensity decrease at high temperature was related to In clustering in the GaInSb layer. Laser structures grown at both 425 and 500°C displayed lower lasing thresholds, lower internal losses, and longer Shockley-Read lifetimes than any similar structures grown previously at NRL. A thicker optical cladding layer of 3.5 m suppressed mode leakage into the substrate and reduced the internal loss to 2.1 cm Ϫ1 at 78 K.

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Section: Laser Characterizationsupporting

confidence: 73%

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Canedy¹,

Boishin²,

Bewley³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…Mode grouping was caused by leakage of optical waveguide mode into the high index substrate, and interference between the waveguide and substrate modes. 11,12 The mode leakage and interference result in gain/loss modulation at a period inversely proportional to the substrate thickness 11,12 and thus complicate the mode selection and wavelength tuning for DFB lasers. This problem can be rem- With a different grating period ⌳ϳ482 nm, a 50-mwide mesa stripe DFB laser ͑denoted as device H͒ from the same bar exhibited DFB modes near 3.24 m with a temperature tuning rate of ϳ0.2 nm/K from 80 to 135 K as shown in Fig.…”

mentioning

confidence: 99%

Continuous-wave operation of distributed feedback interband cascade lasers

Yang

Hill

Yang

et al. 2004

Applied Physics Letters

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Continuous-wave distributed feedback interband cascade lasers operating near 3.3 μm are reported. Single longitudinal mode emission is achieved with side mode suppression ratio greater than 30 dB at temperatures up to 175 K. A clear Bragg stop band in the laser emission spectrum indicates a dominant index coupling with the first-order grating. Detailed characteristics of these lasers are discussed.

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“…An equation analogous to (8) was obtained in [24] for the particular case where the thin waveguide contains just one layer. Here we show that the phase matching criterion is rather general showing a possibility of wavelength selective operation of a laser having a coupled waveguide.…”

Section: Phase Matching In a Coupled Waveguide Structurementioning

confidence: 96%

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Shchukin

Ledentsov

Kalosha

et al. 2010

Physics and Simulation of Optoelectronic Devices XVIII

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The concepts, features, modeling and practical realizations of high power high brightness semiconductor diode lasers having ultrathick and ultrabroad waveguides and emitting in the single vertical single lateral mode are analyzed. Ultrathick vertical waveguide can be realized as a photonic band crystal with an embedded filter of high order modes. In a second approach a tilted wave laser enables leakage of the optical wave from the active waveguide to the substrate and additional feedback from the back substrate side. Both designs provide high power and low divergence in the fast and the slow axis, and hence an increased brightness. Lateral photonic crystal enables coherent coupling of individual lasers and the mode expansion over an ultrabroad lateral waveguide. Experimental results are presented. Obtained results demonstrate a possibility for further expansion of the concept and using the single mode diodes having an ultrabroad waveguide to construct single mode laser bars and stacks.

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Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra

Cited by 39 publications

References 0 publications

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Continuous-wave operation of distributed feedback interband cascade lasers

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

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