Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

Canedy, C. L.; Boishin, G.; Bewley, W. W.; Kim, C. S.; Vurgaftman, I.; Kim, M.; Lindle, J. R.; Meyer, J. R.; Whitman, L. J.

doi:10.1116/1.1688805

Cited by 34 publications

(17 citation statements)

References 26 publications

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“…9,18,31 The Al 0.8 Ga 0.2 As x Sb 1Àx layers were grown as a digital alloy by toggling the As and Sb shutters while the Al and Ga shutters as well as the As and Sb valves remained open, allowing better control of composition compared with random alloys. [32][33][34] The 2-nm InAs layer was included as an etch-stop for device processing; its presence should not impact this study.…”

Section: Methodsmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

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Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-temperature mobilities of 1000 cm 2 /V s to 1100 cm 2 / V s, with the surface-layer material influencing two-dimensional hole densities. The introduction of As into the barrier material allows a wider range of p-channel well/barrier combinations and lattice constants. These could be compatible with n-channel InGaAs wells for complementary field-effect transistor circuits which utilize a common buffer layer. InGaSb wells with thicknesses of 20 nm to 30 nm and compressive strains of 1.0% to 1.5% exhibited hole mobilities of 700 cm 2 /V s to 900 cm 2 /V s.

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Section: Methodsmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

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“…7,8 The designs of the devices with ten active cascade stages were similar to that in Ref. 4, except that the thicknesses of the InAs quantum wells were adjusted (at fixed GaInSb hole well thickness) to vary the emission wavelength.…”

Section: Growth and Processingmentioning

confidence: 99%

Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm

Canedy

Bewley

Lindle

et al. 2008

Journal of Elec Materi

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We report an experimental investigation of four interband cascade lasers with wavelengths spanning the mid-infrared spectral range, i.e., 2.9 lm to 5.2 lm, near room temperature in pulsed mode. One broad-area device had a pulsed threshold current density of only 3.8 A/cm 2 at 78 K (k = 3.6 lm) and 590 A/cm 2 at 300 K (k = 4.1 lm). The room-temperature threshold for the shortest-wavelength device (k = 2.6 lm to 2.9 lm) was even lower, 450 A/cm 2 . A cavity-length study of the lasers emitting at 3.6 lm to 4.1 lm yielded an internal loss varying from 7.8 cm -1 at 78 K to 24 cm -1 at 300 K, accompanied by a decrease of the internal efficiency from 77% to 45%.

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“…It was grown by use of molecular-beam epitaxy (MBE) in a compact 21 T Riber system equipped with both As and Sb crackers as well as dual-indium cells for flexibility [10]. The cracking zones of the group V elements were held at a temperature that produced mostly dimer atomic species.…”

Section: Mbe Growth and Device Fabricationmentioning

confidence: 99%