A CW, single-longitudinal-mode, optically pumped mid-IR distributed-feedback antimonide-based type-II quantum-well laser at 3.62 μm is demonstrated. Record high output powers, > 300 mW per side, and tunability of 5.5 nm are obtained at 77 K.Optically pumped type-II GaSb based lasers have demonstrated output power more than 11 W and coverage across the majority of the molecular spectroscopy region from 2.4-to 9.3-μm [1]. To make it a powerful light source for spectroscopic applications, we applied a distributed-feedback (DFB) grating [2,3] to one of these lasers and achieved record high output power of more than 300 mW per facet for continuous wave (CW), single-longitudinal-mode (SLM) operation at 3.62 μm. DFB assisted CW SLM lasing has been previously demonstrated on both intersubband cascade (QC) [3,4] and interband cascade (IC) [5,6] lasers. But their powers are below 135 mW and none of them covers the 3.5-to 4.6-μm wavelength range particularly relevant to monitoring the organic compounds such as those from the Alkyne (C≡C) and Aldehyde (O=CH) groups.The laser device was epitaxially grown by molecular beam epitaxy (MBE). As shown in Fig. 1(a), It consists of a GaSb:Te substrate, a 4-μm thick GaSb bottom clad layer, a 1.5-μm thick active region consisting of 14 type-II InAs/InGaSb/InAs W quantum wells [See Fig. 1(b)] and a 1.25-μm thick top clad layer, in which the 1-D Bragg grating was fabricated using interference lithography [7] and inductive coupled plasma (ICP) etching. [See Fig. 1(c)]. The grating pitch was 488.2 nm equal to λ/2n eff , where λ is the lasing wavelength and n eff is the waveguide modal index. A unique feature of our DFB laser is that the grating k-vector is tilted at 6°to the facet to reduce Fabry-Perot (F-P) feedback competition. The optical pump stripe can be easily oriented between the normal to the facets and parallel to the grating k-vector [cf. Fig. 2(a) and 2(b)]. GaSb:Te Substrate GaSb Clad Optical Mode GaSb Clad Active Region 8ML In Ga Sb 0.4 0.6 4.2ML InAs 4.2ML InAs 500nm a) b) c) Fig. 1. (a) cross-section of the laser device; b) W structure of the type II quantum wells in the active region; (c) crosssection SEM picture of the grating in the top clad.The grating was etched 350-nm deep into the top clad for optimal index-coupled feedback (κL~1.5) [2]. Then the wafer was lapped and polished to a thickness of about 150 μm (to provide good thermal contact) and cleaved into 2.5-mm long cavity. The sample was then In soldered (epi-side up) to a copper heat sink and mounted in a liquid-nitrogen (LN2) cooled dewar. A 1908-nm CW fiber laser with maximum power of 21 W was used to pump the DFB laser. The 4.5-mm diameter laser beam [full width at half maximum (FWHM)] with M 2 <1.05 was focused by a cylindrical lens into an 80 μm (FWHM) stripe at the grating surface of the DFB laser.A ½-m monochromator with spectral resolution of 0.3 nm was used for spectral measurements. Collimated DFB laser output was passed through a 2.5-μm long-pass-filter to remove any residual pump light, and then focus...