MBE growth optimization of Sb-based interband cascade lasers

Hill, Cory J.; Yang, Rui Q.

doi:10.1016/j.jcrysgro.2004.12.089

Cited by 27 publications

(14 citation statements)

References 9 publications

(13 reference statements)

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“…Mid-infrared interband cascade laser made from InAs/Ga(In)Sb/AlSb muti-quantum wells was reported by C. J. Hill et al of Jet Propulsion Laboratory [27]. This laser structure was grown on p-GaSb（001） substrate by MBE as follows sequence: 0.3 μm GaSb buffer layer, 2-3 μm InAs/AlSb superlattice bottom claddings, multi-quantum well InAs/Ga(In)Sb /AlSb active layers ( be repeated 12-35 times), InAs/ AlSb superlattice top claddings and finally an n-type InAs cap layer.…”

Section: Infrared Lasersmentioning

confidence: 94%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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Section: Infrared Lasersmentioning

confidence: 94%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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“…The Sb-based type-II IC laser structures are composed of multiple coupled quantum wells (QWs) made from Al(In)Sb, InAs, and Ga(In)Sb layers [10][11][12][13][14][15][16][17] and have cascade stages ranging from 12 to 35 covering emission wavelength range from ~2.8 to 5.7 µm. Thick InAs/AlSb superlattices (>1.2 µm) were usually employed as the bottom and top cladding layers.…”

Section: Laser Structure and Materials Growthmentioning

confidence: 99%

“…Following the proposal of IC lasers in 1994 [1] and stimulated by the theoretically projected high performance of type-II IC lasers [3][4] and remarkable advances of intraband QC lasers [5][6], significant progress in developing type-II IC lasers has been achieved with the use of three different molecular beam epitaxy (MBE) systems [7][8][9][10][11][12][13][14][15][16][17]. The successful growth of IC laser samples in different MBE systems at three laboratories (i.e.…”

Section: Introductionmentioning

confidence: 99%

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Mid-IR type-II interband cascade lasers and their applications

et al. 2005

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hv hv hv hv hv hv hv Cascading hv k interband transition E Fig.1. Illustration of the interband cascade laser ABSTRACTType-II interband cascade lasers are efficient and compact mid-infrared (3-5 µm) light sources with many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities (e.g. ~8 A/cm 2 at 80 K), high temperature operation (e.g. 325 K in pulsed and 217 K in cw modes), and continuous wave operation of single-mode distributed feedback (DFB) lasers. These DFB lasers have been integrated into laboratory spectrometers for detection of gases such as CH 4 and HCl. One laser was flown on a high-altitude balloon instrument and measured HCl profiles in the stratosphere as part of Aura satellite instrument validation. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

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“…Previous "W" diodes demonstrated pulsed lasing at room temperature 6,7 and cw operation to 218 K, 8,9 while interband cascade lasers (ICLs) with 12-25 stages of the "W" active region recently lased cw up to 214 K (λ = 3.4 µm) 10 and 237 K (λ = 3.2 µm). 11 The purpose of the work reported in this article is twofold. First of all, a systematic study of "W" diode lasers with designs modified in a variety of ways to probe effects on the electrical and lasing characteristics was conducted.…”

Section: Introductionmentioning

confidence: 99%

Mid-IR type-II W and interband cascade lasers emitting high CW powers

et al. 2006

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The I-V characteristics, lasing thresholds, and wallplug efficiencies of type-II "W" mid-IR diode lasers from 16 different wafers were studied in order to determine the influence of various device parameters. At T = 90 K, the wallplug efficiency for a 1-mm-long gain-guided device was > 10% and the slope efficiency was 142 mW/A (38% external quantum efficiency). When a 22-µm-wide ridge was lithographically defined on a 5-period "W" laser with a p-GaSb etch stop layer, the maximum cw operating temperature increased to 230 K. We also investigated 5-stage and 10-stage interband cascade lasers containing "W" active quantum wells. For 10-stage devices, the lowtemperature threshold current densities were somewhat higher than in the "W" diodes while at higher temperatures they were slightly lower. The threshold voltage was only ≈ 0.1 V larger than the photon energy multiplied by the number of stages, corresponding to a voltage efficiency of > 96%, while the differential series resistance-area product above threshold was as low as 0.21 mΩ·cm 2 at 100 K. At T = 78 K, the cw slope efficiency was 0.48 mW/A (126% external quantum efficiency), and a maximum cw power of 514 mW was produced by an epi-side-upmounted 2-mm-long 10-stage laser cavity with uncoated facets. A 5-stage 2-mm-long interband cascade laser produced ≈ 700 mW of output power at 80 K, with a maximum wallplug efficiency of 20% per facet.Keywords: diode laser, interband cascade laser, quantum well, mid-infrared. INTRODUCTIONAmbient-temperature cw operation remains unrealized for any electrically-pumped semiconductor laser in the 3.2-3.9 µm spectral region, in spite of the significant progress made by type-I 1 and quantum cascade 2,3 lasers on the short and long wavelength sides, respectively. An important contender to fill the gap is the antimonide type-II "W" structure, 4,5 which consists of a Ga(In)Sb hole quantum well (QW) surrounded by two InAs electron QWs, which are in turn bounded by AlGa(As)Sb barrier layers. Previous "W" diodes demonstrated pulsed lasing at room temperature 6,7 and cw operation to 218 K, 8,9 while interband cascade lasers (ICLs) with 12-25 stages of the "W" active region recently lased cw up to 214 K (λ = 3.4 µm) 10 and 237 K (λ = 3.2 µm). 11The purpose of the work reported in this article is twofold. First of all, a systematic study of "W" diode lasers with designs modified in a variety of ways to probe effects on the electrical and lasing characteristics was conducted.Since the antimonide material system remains relatively immature by comparison with GaAs-and InP-based structures, it has been necessary to address numerous growth and processing issues along the way to improving the laser performance. Most of the present structures were designed for low-temperature emission at λ ≈ 3.2 µm, although a few longer-wavelength devices (λ ≈ 3.8 µm and 4.4 µm) were also fabricated. Both broad gain-guided and narrow ridge geometries were investigated. * vurgaftman@nrl.navy.mil; phone 202-404-8604; fax 202-404-7530

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MBE growth optimization of Sb-based interband cascade lasers

Cited by 27 publications

References 9 publications

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Mid-IR type-II interband cascade lasers and their applications

Mid-IR type-II W and interband cascade lasers emitting high CW powers

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