Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Abstract

The concepts, features, modeling and practical realizations of high power high brightness semiconductor diode lasers having ultrathick and ultrabroad waveguides and emitting in the single vertical single lateral mode are analyzed. Ultrathick vertical waveguide can be realized as a photonic band crystal with an embedded filter of high order modes. In a second approach a tilted wave laser enables leakage of the optical wave from the active waveguide to the substrate and additional feedback from the back substrate side. Both designs provide high power and low divergence in the fast and the slow axis, and hence an increased brightness. Lateral photonic crystal enables coherent coupling of individual lasers and the mode expansion over an ultrabroad lateral waveguide. Experimental results are presented. Obtained results demonstrate a possibility for further expansion of the concept and using the single mode diodes having an ultrabroad waveguide to construct single mode laser bars and stacks.

Advances in high power high beam quality diode lasers

“…宽0.3 nm [42] ; 韩国Gwangju科学院和加拿大国立研究 院研制的1.55 μm三阶和二阶光栅DFB, 单纵模功率 为15 mW [43,44] ; [45] ; 设计并研制出940 nm二阶光栅DFB半导体激 光器, 连续输出101 mW、光谱线宽90 pm、远场发散 角为2.7°和7.3°、边模抑制比20 dB [46] . 24] 2003 横向5.5°~6° [ 26] 2005 横向9.7°~10.7°, 连续1.8 W, 脉冲10 W [27] 2008 横向4°~5°, 侧向3.5°, 连续1.3 W [28] 2010 横向6°, 侧向5°, 连续2.2 W, 光参量积0.47 mm mrad [29] 2014 中国科学院半导体研究所 横向10.5°, 200 μm条宽连续输出功率5.75 W [30] 1060 2014 柏林工业大学 横向15°, 侧向9°, 峰值功率3 W [31] 2015 横向15°, 侧向11°, 6 μm条宽、2.64 mm腔长, 连续1.8 W [32] 2016 M 2 =1.55, 9 μm条宽功率1.9 W [33] 808 2015 中 国 科 学 院长春 光 学 精 密 机械与物理研究所 横向4.91°, 4 mm腔长连续4.6 W [34] 可连续输出几十瓦至数百瓦功率, 主流结构为条宽 出300 W功率 [50] . 北京凯普林通过空间叠加激光单管 和偏振合束, 200 μm/0.22光纤输出600 W [51] .…”