Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

Abstract

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Resonance-enhanced waveguide-coupled silicon-germanium detector

“…8,9 Within the GlobalFoundries (formerly IBM) 45 nm 12SOI node, we have recently demonstrated a complete zero-change photonic toolbox comprising waveguides with 5 dB/cm propagation losses, 8 grating-couplers, 10 5 Gbps modulators, 11 and 32 GHz photodetectors. 7 These components enabled the first realization of an optical link between a microprocessor and an external memory. 12 However, the responsivity of the first photodiodes was limited to $0.02 A/W and directly impacted the power efficiency of the link.…”

“…12 Similar to our first demonstration, the photodiode exploits carrier generation in silicon-germanium (SiGe) which is already present in the 45 nm 12SOI node for stressing the channels of p-FETs. 7 To increase the responsivity, here we exploit resonanceenhancement in a microring. The disk-like cavity supports a whispering gallery mode for effectively separating the optical field from the metal contacts.…”

“…These processes moreover exploit 90 nm or older nodes which are not currently utilized for building high-performance computers (HPC). 6,7 An alternative approach consists of designing photonic components in existing CMOS nodes without violating any design rule and without requiring any modifications to the process flow-the so-called zero-change CMOS. 8,9 Within the GlobalFoundries (formerly IBM) 45 nm 12SOI node, we have recently demonstrated a complete zero-change photonic toolbox comprising waveguides with 5 dB/cm propagation losses, 8 grating-couplers, 10 5 Gbps modulators, 11 and 32 GHz photodetectors.…”

High-speed polysilicon CMOS photodetector for telecom and datacom

“…3 The main hurdle towards the extension of this device platform to the datacom and telecom spaces has been the lack of a highspeed detector at wavelength standards for these applications (i.e., from 1300 to 1550 nm). The monolithic SiGe photodetectors in this platform used so far for inter-chip interconnect application have high bandwidth and quantum efficiency 9,10 but their operation is limited to wavelengths below 1200 nm due to the small mole fraction of Ge in CMOS.…”

“…Today, zero-change, deep submicron, CMOS photonics delivers high performance passive and active individual photonic components such as low loss waveguides and high Q resonators, 6 high efficiency vertical grating couplers (<0.5 dB insertion loss), 7 high-speed and compact depletion-mode modulators, 8 and highspeed (32 GHz @ 0.02 A/W) 9 and high quantum efficiency SiGe photodetectors (5 GHz @ 0.55 A/ W). 10 The unique advantage of monolithic integration with electronics has enabled low-power transmitters (30 fJ/bit) and receivers (374 fJ/bit), and wavelength locking of the resonant filters and modulators.…”