Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Abstract

A methodology for the heterogeneous integration of epitaxial GaAs wafers with fully processed standard bipolar complementary metal-oxide-semiconductor Si wafers is presented. The complete low-temperature wafer bonding process flow, including procedures for the Si wafer planarization and GaAs substrate removal, has been developed and evaluated. The implementation of an in-plane optical link, consisting of an edge-emitting laser diode, a waveguide and a photodiode, is demonstrated.

Quantum dot lasers and integrated guided wave devices on Si

“…Hybrid integration of III-V semiconductors with Si has been extensively investigated by using heteroepitaxial growth [5][6][7] or wafer bonding techniques. 8 Recently, an evanescent laser with low-temperature bonding technique has also been developed on Si. 9 However, the performance of III-V semiconductor lasers on Si is still poor due to the large differences in lattice constants and thermal expansion coefficients between GaAs and Si as well as anti-phase domain (APD) problems.…”

Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

“…Over the past 10 years, direct wafer bonding has received considerable attention for releasing the restrictions of lattice matching imposed by epitaxial growth and opening new degrees of freedom for the design of semiconductor devices [1][2][3][4][5][6][7][8][9][10]. During the wafer bonding process, thermal treatment is a very important step, which increases the surface energy and bonding strength of the bonded wafers [11].…”

Considering Van Der Waals Forces in Micromanipulation Design

“…Manipulating biological objects such as cells, DNA and chromosomes is frequently performed in bio-science and bio-engineering [1,2]. On the other hand, new mechatronic products integrating precise mechanisms, actuators and sensors with smaller and smaller sizes are expected continuously [3,4].…”