Quantum dot lasers and integrated guided wave devices on Si

Abstract

We have studied the growth and characteristics of self-organized InGaAs/GaAs quantum dot lasers and their monolithic integration with waveguides and quantum well electroabsorption modulators on Si. Utilizing multiple layers of InAs quantum dots as effective dislocation filters near the GaAs-Si interface, we have demonstrated high performance quantum dot lasers grown directly on Si that exhibit, for the first time, relatively low threshold current (J th = 900 A/cm 2 ), large characteristic temperature (T 0 = 278 K), and output slope efficiency (≥ 0.3 W/A). Focused-ion-beam milling has been used to form high-quality facets for the cavity mirror and coupling groove of an integrated laser/waveguide system on Si. We have also achieved a groove-coupled laser/modulator system on Si that exhibits a coupling coefficient greater than 20% and a modulation depth of ~ 100% at 5 V reverse bias.