Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

Zhao, Hongquan; Li, Renjie; Huang, Yong-Zhen; Wang, Yutian

doi:10.1016/j.mseb.2006.06.009

Cited by 3 publications

(5 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The above discussions indicates that under the optimal conditions of preparation of SAR, that is, 0.25wt.% initiator to AA, 0.25wt.% crosslinking agent, 70% neutralization degree of AA, microwave power level of 320W, irradiation time of 5min, the SAR with the distilled water absorption rate of 1388g•g -1 (20℃) is obtained. Compared to the literature [8], the absorption rate increases 40% and the irradiation time shortens 37%.…”

Section: Effects Of Monomermentioning

confidence: 59%

See 1 more Smart Citation

Microwave-Irradiated Preparation of Super Absorbent Resin by Graft Copolymerization of Cellulose and Acrylic Acid/Acrylamide

Jing

Zhao

2010

AMR

View full text Add to dashboard Cite

Graft copolymerization of acrylic acid(AA) and acrylamide(AM) on cellulose to prepare super absorbent resin (SAR) under microwave irradiation were investigated using N,N-methylene bis-acrylamide as crosslinking agent, and potassium persulfate/sodium thiosulfate as initiator. The results indicated that it only needed 5min under the microwave level of 320W to obtain the resin with the maximum absorption amount of 1388g•g-1 , under the conditions that the ratio of acrylic acid to cellulose of 14:1, 0.25wt% initiator to AA, 0.25wt% crosslinking agent, 70% neutralization degree of AA. Under microwave irradiation, the preparation of SAR could be completed without the protection of nitrogen. Compared to conventional heating method, the methods had the striking advantages of short reaction time, simple process and low cost.

show abstract

Section: Effects Of Monomermentioning

confidence: 59%

“…In literature, the reports about the preparation of SRA using cellulose under microwave irradiation are few. Zhao and co-workers [8] have studied about it. However, the distilled water absorption rate at 20℃ is no more than 1000g•g -1 and the irradiation time needs 8min.…”

Section: Introductionmentioning

confidence: 99%

Microwave-Irradiated Preparation of Super Absorbent Resin by Graft Copolymerization of Cellulose and Acrylic Acid/Acrylamide

Jing

Zhao

2010

AMR

View full text Add to dashboard Cite

show abstract

“…In [2][3][4][5][6][7], the thermal stresses of bonding materials were analyzed by using a two-dimensional plane structure. But they did not analyze the annealing process from the three-dimensional point of view and could not reflect the thermal deformation and thermal stress distribution.…”

Section: Introductionmentioning

confidence: 99%

“…But they did not analyze the annealing process from the three-dimensional point of view and could not reflect the thermal deformation and thermal stress distribution. The references [2,4,[6][7][8][9] analyzed the effect of annealing temperature on thermal stresses, while the influence of wafer thickness on thermal stresses was analyzed by [2,[5][6][7]10]. The references [11,12] analyzed the effect of annealing temperature on bonding strength.…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses

Qiu

Qiu²,

Guo

et al. 2017

Advances in Materials Science and Engineering

View full text Add to dashboard Cite

In order to effectively reduce the thermal stresses of Si/GaAs bonding wafers during their annealing process, first of all, based on E. Suhir's bimaterial thermal stress theory, the thermal stresses in the wafer bonding interfaces are analyzed and the thermal stress distribution formulas are obtained. Then, the thermal stress distribution curves of Si/GaAs bonding interfaces are investigated by finite element method (FEM) and are compared with the results from E. Suhir's bimaterial thermal stress theory. Finally, some effective strategies are proposed to reduce the thermal stresses in the bonding interfaces.

show abstract

“…The observation of the variation of the lattice plane spacing as a function of the plane orientation in the sample coordinate system is described in Noyan and Cohen (1987) and Welzel et al (2005). Here a polycrystalline material is suited at best; also the thin-layer analysis is realizable (Zhao et al , 2006). Moreover, single-crystal investigations (Ortner, 2005) are also possible.…”

Section: Introductionmentioning

confidence: 99%

Curvature determination of embedded silicon chips byin siturocking curve X-ray diffraction measurements at elevated temperatures

et al. 2016

View full text Add to dashboard Cite

The deflection (curvature) of embedded single-crystal silicon chips was investigated by rocking curve X-ray diffraction techniques at two significant manufacturing stages in the process chain of printed circuit boards with embedded components. An overview of the curvature deduction by two different approaches was presented: (1) the measurement of the variation of the rocking curve maximum as a function of the lateral sample position along a specific traverse; the slope in such a diagram is then proportional to the corresponding curvature in that direction. (2) The evaluation of the rocking curve width; here the peak width is inversely proportional to the curvature at known beam diameter, diffraction angle, and beam divergence. It was shown that the rocking curve method is applicable to determine the curvature inside single crystalline chips. Furthermore, the method is also suitable to determine the curvature of fully embedded or encapsulated chips. Additionally the absorption of the radiation in the embed medium was quantitatively discussed. The curvature of two different prepared samples was determined at temperatures up to 200 °C in a heating stage attached to the diffractometer device.

show abstract

Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

Cited by 3 publications

References 33 publications

Microwave-Irradiated Preparation of Super Absorbent Resin by Graft Copolymerization of Cellulose and Acrylic Acid/Acrylamide

Microwave-Irradiated Preparation of Super Absorbent Resin by Graft Copolymerization of Cellulose and Acrylic Acid/Acrylamide

Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses

Curvature determination of embedded silicon chips byin siturocking curve X-ray diffraction measurements at elevated temperatures

Contact Info

Product

Resources

About