2019
DOI: 10.1186/s11671-019-2991-1
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Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Abstract: Wafer-scale, conformal, two-dimensional (2D) TiO 2 -Ga 2 O 3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO 2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO … Show more

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Cited by 13 publications
(6 citation statements)
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“…Atomic layer deposition (ALD) stands out as an ideal technique for farbicating films layer-by-layer with accurate thickness control, excellent uniformity and conformality. Selective ALD takes the method to the next step, with the capability of controlling where to grow, while leaving adjacent areas intact . The surface sensitivity of selective ALD also makes it particularly appealing beyond the semiconductor industry to many emerging applications. …”
Section: Introductionmentioning
confidence: 99%
“…Atomic layer deposition (ALD) stands out as an ideal technique for farbicating films layer-by-layer with accurate thickness control, excellent uniformity and conformality. Selective ALD takes the method to the next step, with the capability of controlling where to grow, while leaving adjacent areas intact . The surface sensitivity of selective ALD also makes it particularly appealing beyond the semiconductor industry to many emerging applications. …”
Section: Introductionmentioning
confidence: 99%
“…The development of different nanoscale two-dimensional (2D) heterostructures for their usage in various electrochemical devices is modern and established trend during the last decade of the twenty-first century [1][2][3][4][5]. So far, several technologies have been dominated in this trend including RF sputtering, chemical vapor deposition (CVD), hydrothermal method, solvothermal method, thermal evaporation, sol-gel, mechanical exfoliation, etc.…”
Section: Introductionmentioning
confidence: 99%
“…41 Xu et al fabricated twodimensional TiO 2 -Ga 2 O 3 p-n heterostructures, demonstrating the contribution of heterostructures in enhancing photocatalytic activity. 45 Furthermore, the construction of appropriate phase junction structure in Ga 2 O 3 can also signicantly enhance photocatalytic activity. [46][47][48] Liu et al demonstrated that the mesopores and heterojunction in the mixed-phase Ga 2 O 3 are responsible for enhancing photocatalytic activity.…”
Section: Introductionmentioning
confidence: 99%