Phase junction enhanced photocatalytic activity of Ga₂O₃ nanorod arrays on flexible glass fiber fabric

Abstract

Ga2O3 nanostructures hold great potential applications in photocatalytic fields due to their stability, high efficiency and environmental friendliness.

Transport Mechanism of Enhanced Performance in an Amorphous/Monoclinic Mixed-Phase Ga2O3 Solar-Blind Deep Ultraviolet Photodetector

“…The yellow, red, and green dotted selected areas correspond to the amorphous, interface, and crystalline regions, respectively. In Figure 1h, the lattice parameter of the crystalline region was measured to be 0.24 nm, corresponding to the (401) plane of β-Ga2O3 [31]. Figure 1j-l represent the FFT images in Figure 1h.…”

“…For the Ga 2 O 3 material, its different polymorphs are usually reported, namely α, β, γ, δ, ε, and even amorphous phase [1,30]. Among said polymorphs, α/β mixed-phase Ga 2 O 3 including nanoarrays and thin film materials can be easily realized through the solution method and pulsed laser deposition method [17,[31][32][33]. So far, based on α/β mixed-phase Ga 2 O 3 , research has been conducted in photocatalysis [31], water splitting [32], and solar-blind ultraviolet photodetectors [17].…”

“…Among said polymorphs, α/β mixed-phase Ga 2 O 3 including nanoarrays and thin film materials can be easily realized through the solution method and pulsed laser deposition method [17,[31][32][33]. So far, based on α/β mixed-phase Ga 2 O 3 , research has been conducted in photocatalysis [31], water splitting [32], and solar-blind ultraviolet photodetectors [17]. In fact, Ga 2 O 3 thin films prepared by sputter deposition at room temperature (RT) are usually amorphous [5,34].…”

Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

“…For instance, Du et al and Tang et al deposited Ga 2 O 3 on polyethylene naphthalate polymer substrates and silica glass fabric substrates, respectively. However, due to the limited thermal stability and epitaxial ability of such substrates, the Ga 2 O 3 films are either amorphous or randomly oriented and polycrystalline. , …”

“…However, due to the limited thermal stability and epitaxial ability of such substrates, the Ga 2 O 3 films are either amorphous or randomly oriented and polycrystalline. 31,32 A flexible substrate must be provided that can simultaneously meet two requirements to achieve direct in situ growth of mono-oriented oxide thin films for flexible devices. First, robust thermal stability allows a high-temperature reaction.…”