New Generation Beta‐Gallium Oxide Nanomaterials: Growth and Performances in Electronic Devices

Abstract

In the last decade, beta‐gallium oxide (β‐Ga2O3) has been the subject of extensive research and has rapidly developed as a material for ultra‐wide bandgap semiconductors. One‐dimensional (1D) β‐Ga2O3 nanostructures have advantages over bulk β‐Ga2O3, including a high‐specific surface area, sensitivity, and the quantum confinement effect. These advantages are favorable to developing various applications such as power electronics with improved heat dissipation effect, high detectivity photodetectors, and high sensitivity gas sensors. These nanostructures can be fabricated through top‐down or bottom‐up methods and have been utilized in various shapes, such as nanowires, nanobelts, nanorods, nanotubes, or networks, in various electronic devices. This review summarizes the recent developments in 1D β‐Ga2O3 nanostructures, focusing on growth methodologies and mechanisms. In detail, the growth methodologies of 1D β‐Ga2O3 are summarized based on four categories: vapor–liquid–solid, vapor–solid, solution–solid, and template mechanisms. Ten growth techniques regarding different fabrication mechanisms are reviewed and the corresponding applications such as gas sensors, UV photodetectors, resistive random access memories, and photocatalysts are summarized. This review provides material design strategies for developing next‐generation optoelectronic or electronic products by summarizing the properties and fabrication methods of 1D β‐Ga2O3.

Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

“…The low symmetry of monoclinic crystal systems, as in the β-Ga 2 O 3 case, might promote the growth of nanostructures with different crystalline orientations, which often leads to the formation of nanostructures with various dimensions, such as NWs, nanobelts (NBs), and nanosheets/nanoplates [ 19 – 20 ]. Therefore, it is essential to understand how the elastic modulus values of NWs and NBs may differ.…”

Synaptic properties of GaOx-based memristor with amorphous GaOx deposited by RF magnetic sputtering

“…The attention garnered by GaO x -based memristors (GOMs) suggests their potential applications in the broader scope of artificial intelligence (AI) or the Internet of Things (IoT) in the future. 18,19 Certain GOMs have been investigated for their potential applications in resistive random access memory (RRAM) [20][21][22][23][24][25] and synapses. 26 It is essential to note that RRAM and synaptic GOM are distinct device types, each exhibiting different properties.…”

Research on the carrier transmission distance of a-Ga2O3 solar-blind photodetector

“…[4] In recent years, several review articles have been summarized for crystalline Ga2O3 UV photodetectors (PDs). [5][6][7][8] Compared with β-phase Ga2O3, amorphous gallium oxide (a-Ga2O3) has received more and more attention from researchers due to its high breakdown field strength, low-temperature preparation, and other advantages. Magnetron sputtering, as a well-developed thin-film deposition technology, has the advantages of simple equipment, low deposition temperature, high deposition rate, good adhesion, and good uniformity, and is suitable for large-area deposition, and has been widely used in industry.…”