Synaptic properties of GaOx-based memristor with amorphous GaOx deposited by RF magnetic sputtering
Yanhong Liu,
Qingyuan Zuo,
Jiayi Sun
et al.
Abstract:GaOx devices have been extensively explored for applications such as power devices and solar blind detectors, based on their wide bandgap. In this study, we investigated the synaptic properties of the amorphous gallium oxide (a-GaOx)- based memristor with a W/WOx/a-GaOx/ITO structure, in which a-GaOx are deposited by RF magnetic sputtering at ambient temperature. The structure and components of a-GaOx are characterized by XRD, XPS, SEM, and EDS. The electrical test indicates that W/WOx/a-GaOx is ohmic due to t… Show more
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