Inherently Selective Atomic Layer Deposition and Applications

Abstract

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining growing interest. The selective ALD has unlocked attractive avenues for the development of novel nanostructures and found its versatile applications in emerging fields beyond the semiconductor industry. In this article, the recent developments of inherently selective ALD methods are summarized. Based on precursors’ preferential adsorptions on dangling bonds, interstitials, grain boundaries, etc., single atom deposition, well aligned nanowire growth, and defect passivation can be achieved to minimize the total surface energy. By choosing the precursors with appropriate ligands, activities, steric hindrances, etc., terrace and step edge preferential selectivity can be obtained on the same material. The starting surfaces have remarkable influences on the initial nucleation stage, which are more pronounced between different materials compared to the heterogeneity regions of the same material. Thus, the inherent selectivity can be achieved or enhanced by tuning kinetic parameters including precursor partial pressure, temperature, etc. The intrinsic driving forces, challenges, and perspectives of the inherently selective ALD with accuracy and robustness for nanofabrication are discussed. It is a great expansion of the selective ALD technique for bottom up nanofabrication in various emerging application fields.

Designing Nanoparticles and Nanoalloys for Gas-Phase Catalysis with Controlled Surface Reactivity Using Colloidal Synthesis and Atomic Layer Deposition

“…The deposition selectivity during such ALD processes originates from the quick material growth on a specific site or surface, while there is a nucleation delay before growth initiation on other, less desired sites or surfaces [33]. In inherently selective ALD, this is established by an appropriate combination of precursor, co-reactant, substrate material, precursor partial pressure and deposition temperature [307]. Alternatively, the deposition can be preceded by a surface preparation treatment prior to the ALD process to selectively functionalize the sample.…”

Recent advances in mechanism investigation of atomic layer deposition by <italic>in situ</italic> photoelectron spectroscopy

“…[60] ; (b) 分别在经过硫钝化(左)和经过 NH 4 OH刻蚀(右)处理的InAs基底上ALD沉积Al 2 O 3 前后对应的As 2p 3/2 XPS谱 [61] (网络版彩图) 图 7 在SiO 2 /Si基底上吸附ALD前驱体MeCpMn(CO) 3 后的 Mn 2p和Si 2p XPS谱 [47] (网络版彩图) 物 [48,70] , 或在氧化物上沉积金属等 [71] . 值得注意的是, 基底抑制生长模式是实现选择性ALD沉积的重要基 础, 它对于新兴的自下而上自对准微纳制造技术非常 重要 [72,73] . .…”

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

“…The above methods achieve high selectivity for nano-feature patterning but have limitations in long passivation time and complex steps. Thus, inherently selective deposition has been investigated to relax process complexity [18]. Up to now, four types of ASD have been reported, including DoD, DoM, MoD and MoM (M = metal, D = dielectric).…”