Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station

Abstract

We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance technique with the capability to provide detailed physical and chemical information about reliability limiting defects in semiconductor devices. EDMR measurements have generally required a complex apparatus, not typically found in solid-state electronics laboratories. The union of a semiconductor probing station with EDMR allows powerful analytical measurements to be performed within individual devices at the wafer level. Our novel approach replaces the standard magnetic resonance microwave cavity or resonator with a small non- resonant near field microwave probe. Using this new approach we have demonstrated bipolar amplification effect and spin dependent charge pumping in various SiC based MOSFET structures. Although our studies have been limited to SiC based devices, the approach will be widely applicable to other types of MOSFETs, bipolar junction transistors, and various memory devices. The replacement of the resonance cavity with the very small non- resonant microwave probe greatly simplifies the EDMR detection scheme and allows for the incorporation of this powerful tool with a wafer probing station. We believe this scheme offers great promise for widespread utilization of EDMR in semiconductor reliability laboratories.

Characterization methods for defects and devices in silicon carbide

“…At the same time, methods have been developed to apply these same techniques to power electronics applications and on a level that will be applicable to production line quality control measurements. 166 More importantly perhaps are synergistic efforts that correlate the results from different techniques. This has been a key approach for defect identification and to elucidate the atomic origin of a signal for a specific technique.…”

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

“…710,711 Here, electrically detected magnetic resonance (EDMR) is one technique that has recently shown the ability to quantitatively detect 795 and identify the structure of defects [796][797][798] in simple MIM devices and CMOS transistors [796][797][798][799][800] with wafer level probing capability. 801 Related Josephson junction defect spectrometers have also recently been developed for directly probing TLS defects in superconducting qubit devices. 802,803 It also important to note that the insulating nature of dielectric materials can present additional challenges to more established chargebased techniques such as the scanning and transmission electron microscopies (SEM/TEM) most commonly utilized for imaging and dimensional metrology (film thickness, device critical dimensions).…”