Characterization methods for defects and devices in silicon carbide

Bathen, Marianne Etzelmüller; Lew, C. T.-K.; Woerle, Judith; Dorfer, C.; Großner, Ulrike; Castelletto, Stefania; Johnson, Brett C.

doi:10.1063/5.0077299

Cited by 17 publications

(9 citation statements)

References 175 publications

(187 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The explanation of the high responsivity at low powers can be attributed to the initial filling of defect and trap states that become filled at higher powers. In case of SiC, it has different types of defects such as vacancies and anti-sites [29], while TaB has also defects and trap states. In the linear region, after these states are filled, the photocurrent will be primarily produced by the generation of electron-hole pairs: based on Fig.…”

Section: Resultsmentioning

confidence: 99%

Near Ultraviolet Photoresponse of a Silicon Carbide and Tantalum Boride Heterostructure

et al. 2023

View full text Add to dashboard Cite

Silicon carbide (SiC) is widely used in abrasives, heating devices, light emitting diodes and high-power electronics, because of its unique physical-chemical properties including high hardness, high melting point, excellent thermal conductivity, and wide bandgap. In recent years, its color centers have also been used as potential sources of single photons. Given that borides and carbides are refractory materials, we decided to study a heterostructure formed by an n-doped silicon carbide substrate and a layer of tantalum monoboride (TaB) for near ultraviolet (UV) photodetection. It is shown that the addition of TaB creates a rectifying device that can handle currents higher than 300 mA, showing its potential for high-power optoelectronic devices. The detector also has a high responsivity of 2.9 A/W at the free-space wavelength of 405 nm and a fast frequency response of 610 kHz. The high performance of the detector is attributed to the high thermal and electrical conductivity, large bandgap of SiC, and its moderately close match in atomic arrangement with TaB. Such heterostructure offers a simple method to produce highperformance near UV photodetectors operating under hard conditions such as high power, high temperature and work in corrosive or oxidizing environments.

show abstract

Section: Resultsmentioning

confidence: 99%

Near Ultraviolet Photoresponse of a Silicon Carbide and Tantalum Boride Heterostructure

et al. 2023

View full text Add to dashboard Cite

show abstract

“…An ensemble of radiative spin defects is also relevant for creating quantum systems that can improve the semi-classical sensitivity. Numerous recent reviews have described the properties of colour centres in SiC in detail [67][68][69][70][71][72].…”

Section: Spin Defects and Colour Centresmentioning

confidence: 99%

Quantum systems in silicon carbide for sensing applications

Castelletto,

Lew,

Lin

et al. 2023

Rep. Prog. Phys.

Self Cite

View full text Add to dashboard Cite

This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

show abstract

“…The objective of this work is to use capacitance transient spectroscopy in the form of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) [12][13] to investigate and identify the heavy-ion induced electrically active defects, with particular attention to defects created when observing SELC. Commercial 4H-SiC Schottky power diodes irradiated with heavy-ion microbeam have been analysed, comparing measurements before and after the irradiation for devices exposed at different biases.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Für

Belanche

Martinella

et al. 2023

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analysed and compared to devices showing or not signatures of Single Event Leakage Current (SELC) degradation. An additional peak labelled 'C' with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.

show abstract

Characterization methods for defects and devices in silicon carbide

Cited by 17 publications

References 175 publications

Near Ultraviolet Photoresponse of a Silicon Carbide and Tantalum Boride Heterostructure

Near Ultraviolet Photoresponse of a Silicon Carbide and Tantalum Boride Heterostructure

Quantum systems in silicon carbide for sensing applications

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Contact Info

Product

Resources

About