Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Für, Natalija; Belanche, M.; Martinella, Corinna; Kumar, P.; Bathen, M. E.; Großner, Ulrike

doi:10.1109/tns.2023.3242760

Cited by 5 publications

(1 citation statement)

References 24 publications

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“…Furthermore, from the Rch and Rdrift calculations no increase of Rdrift was observed in this study. In contrast, in the case of irradiation with higher-LET particles, signatures of bipolar degradation are observed in the pre-SEB region, both electrically and when investigating the material properties and radiation-induced defects in the device, indicating the presence of stacking defects [33][34]. Such defects are known to cause an increase in on-resistance of the MOSFET and forward voltage of the body-diode [35].…”

Section: Discussionmentioning

confidence: 99%

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

Martinella

Race

Stark

et al. 2023

IEEE Trans. Nucl. Sci.

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Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric-neutrons were performed for commercial SiC power MOSFETs with different architectures (i.e., planar gate, asymmetric trench and symmetric trench). The average electric fields over the depletion layer width and the electric field distributions are reported for the tested conditions and compared for the three architectures, confirming the necessity of a lower de-rating for the trench design to protect from SEB, compared to planar ones. In addition to the epitaxial layer design, the influence of other design parameters on the SEB threshold is discussed. Finally, to investigate the presence of precursor damage in the pre-SEB region, a methodology is presented and used to study the radiation-induced degradation of the channel and drift resistances of devices which survived the SEB tests.

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Section: Discussionmentioning

confidence: 99%

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

Martinella

Race

Stark

et al. 2023

IEEE Trans. Nucl. Sci.

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Dual configuration of shallow acceptor levels in 4H-SiC

Bathen,

Kumar,

Ghezellou

et al. 2024

Materials Science in Semiconductor Processing

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Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

Kumar,

Bathen,

Martins

et al. 2024

Journal of Applied Physics

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In this work, we have performed a detailed study of the defects created in the bulk of 4H-SiC after thermal oxidation and post oxidation annealing using deep level transient spectroscopy and minority carrier transient spectroscopy (MCTS). The study reveals the formation of several shallow and deep level majority carrier traps in the bandgap. The ON1 (EC−0.85 eV), ON2a (EC−1.05 eV), and ON2b (Ec−1.17 eV) levels are the most dominant and are observed across all the samples (EC denotes the conduction band edge). Three shallow levels Ti(k) (EC−0.17 eV), E0.23 (EC−0.23 eV), and C1/2 (EC−0.36/0.39 eV) are observed in the samples. For most of the majority carrier defects, the highest concentration is observed after an NO anneal at 1300°C. This behavior is sustained in the depth profile measurements where the defect concentration after the NO anneal at 1300°C is significantly higher than for the rest of the samples. The origin of most of the majority carrier defects has been attributed to C interstitial injection from the interface during thermal oxidation and annealing. MCTS measurements reveal two prominent minority carrier traps, labeled O0.17 (EV+0.17 eV) and B (EV+0.28 eV), where the concentration of O0.17 is independent of annealing parameters while the concentration of the B level increases after the NO anneal (EV denotes the valence band edge). Furthermore, the depth profiles of the defects are used to evaluate their diffusion parameters by solving the diffusion equation to fit the experimental profiles. The defect concentrations decay exponentially with depth, which evidences that the defects were created at or near the SiO2–SiC interface and migrate toward the bulk during oxidation and post-oxidation annealing.

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Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Cited by 5 publications

References 24 publications

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

Dual configuration of shallow acceptor levels in 4H-SiC

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

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