Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

Christiansen, Silke; Singh, Rajendra; Gösele, U.

doi:10.1109/jproc.2006.886026

Cited by 161 publications

(135 citation statements)

References 225 publications

Supporting

Mentioning

133

Contrasting

Order By: Relevance

“…1 To realize the annealing step at low temperature, many efforts have been made in recent years. Plasma is a partially ionized gas containing charged and neutral particles, which include positive and negative ions, neutral radicals, atoms or molecules, and UV radiations.…”

mentioning

confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

Room-temperature Si/Si wafer direct bonding has been achieved successfully without wet chemistry treatment as well as no requiring annealing. Very strong bonding strength of Si/Si pairs, close to the bulk-fracture strength of silicon, is demonstrated at room temperature thanks to adding small amount of carbon tetrafluoride (CF 4 ) into oxygen plasma treatment. The surface energies of bonded Si/Si wafer pairs were influenced by plasma treatment parameters. Moreover, the wafer surfaces and the bonding interfaces are analyzed to explore the bonding mechanism. Adding small amount of CF 4 into O 2 plasma does not etch the Si surface in a short time ($60 s), but it renders fluorinated oxide grown on the Si surface, which should be less hydrophilic than the surface treated by O 2 plasma. Therefore, fewer water molecules at bonding interface may be prone to produce many covalent bonds via polymerization reaction and result in strong bonding at room temperature.

show abstract

mentioning

confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Figure 4 shows a schematic diagram of the process. See [25,26,29,30] for reviews on silicon wafer bonding.…”

Section: B Silicon Direct Bondingmentioning

confidence: 99%

Deep reactive ion etched anti-reflection coatings for sub-millimeter silicon optics

et al. 2017

View full text Add to dashboard Cite

Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.

show abstract

“…Such wafer bonding technology is a mature process, which is widely applicable for SOI wafer fabrication, MEMS technology, and optoelectronic device fabrication. As a lot of review papers already exist (Lasky, 1986;Maszara, 1991;Tong and Goesele, 1999;Alexe and Gösele, 2004;Christiansen et al, 2006), we thus only focus the discussion on the application of hybrid silicon lasers. According to the existing demonstrations, we further summarize here the major bonding technologies as below:…”

Section: Wafer Bonding Technologies For On-chip Silicon Lasersmentioning

confidence: 99%

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

et al. 2015

View full text Add to dashboard Cite

Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

show abstract

Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

Cited by 161 publications

References 225 publications

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Deep reactive ion etched anti-reflection coatings for sub-millimeter silicon optics

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Contact Info

Product

Resources

About