High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Abstract

Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

“…Heterogeneous integration of III-V materials on silicon combines the superior gain characteristics of compound semiconductors with the passive waveguide characteristics of Si. Among various integration schemes, hybrid III-V-on-Si laser through wafer bonding technology is considered the most successful and being commercialized [79]. There have been many significant advances in device performance [80][81][82][83][84][85]using improved fabrication technologies compatible with silicon photonics.…”

Opportunities for Wideband Wavelength Conversion in Foundry-Compatible Silicon Waveguides Covered With Graphene

“…We consider a 220 nm-thick strip SOI waveguide on which an oxide cladding is deposited that afterwards is etched down to the silicon top surface. As such, a planarized geometry is created [37] (see Fig. 4) which facilitates the transfer of a graphene layer on top using, e.g., the electrochemical delamination technique [38].…”

Strain-enabled ultra-broadband Ge-based photonic devices for low-cost integration in PICs

“…Although GeSn 31 epitaxy and separate steps of GeSi epitaxy with different Si compositions can be viable for broadband photo-detection and EA modulation, it would inevitably lead to process complexity with increased cost. Likewise, heterogeneous integration via die bonding 32 or transfer printing 33 demands multiple bandgap-varied materials and stringent yield control. Another side effect from the bandwidth limitation is the operating spectra incompatibility between the Ge photodetectors and EA modulators.…”