2011
DOI: 10.1149/1.3560510
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Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Abstract: Room-temperature Si/Si wafer direct bonding has been achieved successfully without wet chemistry treatment as well as no requiring annealing. Very strong bonding strength of Si/Si pairs, close to the bulk-fracture strength of silicon, is demonstrated at room temperature thanks to adding small amount of carbon tetrafluoride (CF 4 ) into oxygen plasma treatment. The surface energies of bonded Si/Si wafer pairs were influenced by plasma treatment parameters. Moreover, the wafer surfaces and the bonding interfaces… Show more

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Cited by 30 publications
(24 citation statements)
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References 12 publications
(22 reference statements)
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“…12b), which was characterized by X-ray photoelectron spectroscopy (XPS) measurements. 10 Thus, adding CF 4 into O 2 plasma could restrict the amount of water molecules adsorbed on surface according to the less hydrophilic surfaces (Fig. 12c).…”
Section: Resultsmentioning
confidence: 98%
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“…12b), which was characterized by X-ray photoelectron spectroscopy (XPS) measurements. 10 Thus, adding CF 4 into O 2 plasma could restrict the amount of water molecules adsorbed on surface according to the less hydrophilic surfaces (Fig. 12c).…”
Section: Resultsmentioning
confidence: 98%
“…In our experiment, adding a small amount of CF 4 to O 2 plasma leads to an increasing of bonding strength at RT in our previous study. 10 It is known that fluorine radicals may generated from the discharged CF 4 . These fluorine radicals are so active and very easily react with the native oxide layer to form a fluorinated oxide layer (Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…11,12 However, the mixture plasma treatment is time consuming and inconvenient. Moreover, the additional fluorinated gas lines combined with accurate gas flow controllers are expensive to equip with commercial plasma chambers, which limits many applications.…”
mentioning
confidence: 99%