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Mobility-lifetime product in epitaxial GaAs X-ray detectors

“…The GaAs material itself is characterized by a low yield and low energy fluorescence, allowing to reach large contrast and high spatial resolution [3]. Moreover, a standard GaAs technology exists for making pixel arrays and the epitaxial technique used for the growth is low cost and non-polluting [4,5].…”

GaAs Photodetector for X-ray Imaging

“…However the situation could be different now that we have demonstrated that 100 to 600 Pim thick epitaxial layers can be obtained in few hours using an economic and non polluting technique [10,11]. Since it has been previously demonstrated that high performances detectors can be obtained with epitaxial layers, we examine here if the new layers we produce, in large quantity, at the desired thickness, and having electronic properties similar to that of the previously used layers [12], could make detectors with similar performances.…”

Photoelectrochemistry of Self‐Limiting Electrodeposition of Ni Film onto GaAs

“…[ 13 ] The first discussion of the instability of GaAs in water was reported by Gerischer, [ 14 ] who discussed the following reaction this was followed by other researchers, who even used water to etch GaAs up to several microns per minutes. [ 15 ] The oxidation of a GaAs surface also facilitates dissociation, possibly forming Ga(OH) 3 or As(OH) 3 . [ 16 ] Studies of PEC water splitting at GaAs have been reported early on, most of them focusing on growing protective metallic layers on GaAs surface to prevent rapid photocorrosion [ 5,17 ] and to modify junction behaviors aiming at a high solar‐to‐hydrogen efficiency.…”