Mobility-lifetime product in epitaxial GaAs X-ray detectors

Sun, G.C.; Zazoui, M.; Talbi, N.; Khirouni, K.; Bourgoin, J. C.

doi:10.1016/j.nima.2006.10.255

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…As a result, the μτ of GaSb could be calculated as ∼3 × 10 −5 cm 2 V −1 for electrons and ∼5 × 10 −6 cm 2 V −1 for holes. These values are comparable to the experimental μτ of GaAs, 28) but still nearly two orders of magnitude lower than that of CdTe, 3,9) suggesting a limit to the maximum absorber thickness for GaSb. However, the room-temperature hole lifetime of GaSb has been predicted to be >100 ns, 26) indicating that the μτ of holes could be comparable to that of electrons.…”

supporting

confidence: 79%

Characterization of GaSb photodiode for gamma-ray detection

Juang

Prout

Liang

et al. 2016

Appl. Phys. Express

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We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p–i–n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half maximum energy resolutions of 1.238 ± 0.028 and 1.789 ± 0.057 keV at 5.89 and 59.5 keV, respectively. We observe good linearity of the GaSb photodiode across a range of photon energies. The electronic noise and charge trapping noise are measured and shown to be the main components limiting the measured energy resolutions.

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supporting

confidence: 79%

Characterization of GaSb photodiode for gamma-ray detection

Juang

Prout

Liang

et al. 2016

Appl. Phys. Express

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“…Such advice should be headed and is normally included as part of the set up of most EDXRF systems, irrespective of the detector material. Although interest continued in GaAs detectors during the review period, [25][26][27] these papers were limited to the fabrication and use of GaAs for X-ray 2D imaging detectors where the stopping power of the GaAs is an advantage but there was no use made of the potential energy dispersive detection from the devices. The potential of diamond as a detector material was reported by De Sio et al, 28 whose focus was mainly on photon counting and extreme radiation hardness in high energy physics and SR applications rather than as useful energy dispersive detectors.…”

Section: Detectorsmentioning

confidence: 99%

Atomic spectrometry update. X-ray fluorescence spectrometry

West

Ellis²,

Kregsamer

et al. 2008

J. Anal. At. Spectrom.

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This annual review of X-ray fluorescence covers developments over the period 2007-2008 in instrumentation and detectors, matrix correction and spectrum analysis procedures, X-ray optics and micro-fluorescence, synchrotron XRF, TXRF, portable XRF and on-line applications as assessed from the published literature. The trend set in previous years continues with an increase in the number of papers published on applications for XRF, including sample preparation, geological, environmental, archaeological, forensic, biological, clinical, thin films, chemical state and speciation studies. Earlier literature has not been ignored in that some of Archimedes oldest writing, previously hidden from sight in a medieval prayer book has now been revealed thanks to the power of modern m-SRXRF. X-ray optics now benefit from the use of poly-capillaries systems, equipment portability has been extended to include the TXRF configuration and readers will find several papers on the use of both two and three dimensional imaging to support environmental, geological and biological studies. The writing team would welcome feedback from readers of this review and invite you to complete the Atomic Spectrometry Updates questionnaire on www.asureviews.org. 9 Applications 9.1 Sample preparation 9.2 Geological and industrial minerals 9.3 Environmental 9.3.1 Aerosols and particulates 9.3.2 Consequences of industrial activity 9.3.3 Other environmental studies 9.4 Archaeological, cultural heritage and forensic 9.5 Industrial 9.6 Clinical and biological 9.7 Thin films and coatings 9.8 Chemical state and speciation 10 Abbrevations 11 References

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“…The use of this technique for the case of GaAs started with water vapor as a transport agent; creating volatile compounds as GaO 2 and As 2 [14]. The problem was that due to the incorporation of oxygen in the GaAs layer growth, the electronic mobility is negatively affected [2,15]. To avoid this effect, atomic hydrogen has been used as the transport agent to create volatile compounds [12,13,16].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique

et al. 2019

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The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the transport agent. An important point about the gaseous atmosphere is the ease in creating volatile compounds when it makes contact with the GaAs source, this favors the transport of material in a CSVT system. Chemical reactions are proposed in order to understand the significant difference produced from the gaseous atmosphere. The films grown with hydrogen are (almost) continuous and have homogeneous layers with preferential orientation (111). The films grown with nitrogen are granular and rough layers with the coexistence of the orientations (111), (220) and (311) in the crystals. The incorporation of impurities in the films was corroborated by energy dispersive spectroscopy (EDS) showing traces of oxygen and nitrogen for the case of the samples obtained with nitrogen. Films grown in a hydrogen atmosphere show a higher band gap than those grown in a nitrogen atmosphere. With the results of XRD and micro-Raman we observe a displacement and broadening of the peaks, characteristic of a structural disorder. The calculations of the FWHM allow us to observe the crystallinity degree and determine an approximate crystallite size using the Scherrer's equation.

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Mobility-lifetime product in epitaxial GaAs X-ray detectors

Cited by 6 publications

References 11 publications

Characterization of GaSb photodiode for gamma-ray detection

Characterization of GaSb photodiode for gamma-ray detection

Atomic spectrometry update. X-ray fluorescence spectrometry

Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique

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