GaAs Photodetector for X-ray Imaging

Abstract

We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers, several hundred microns thick, in a matter of hour. Detectors consisting of a p+/i/n+ structure have been realised with these layers and we present their characteristics obtained from currentvoltage, capacitance-voltage measurements as well as their response versus the energy and flux of X-rays.

Mobility-lifetime product in epitaxial GaAs X-ray detectors

“…The fabrication of these detectors and their performances were given earlier [6][7][8]. The concentration of the residual doping impurities is obtained from the analysis [9] of the capacitance-voltage characteristics.…”

Suitability of epitaxial GaAs for x-ray imaging

“…[15][16][17] The aim of this communication is to describe some of the properties of these detectors that are important for imaging, namely the linearity of the response, the charge-induced polarization, and the afterglow effect. [15][16][17] The aim of this communication is to describe some of the properties of these detectors that are important for imaging, namely the linearity of the response, the charge-induced polarization, and the afterglow effect.…”