Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

Liu, Tong; Verma, Mohini; Kang, Yu-Hong; Orłowski, M.

doi:10.1063/1.4746276

Cited by 77 publications

(70 citation statements)

References 12 publications

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“…Whereas, previously reported TS property in ECM devices are usually observed at low compliance current (Icc, typically, < 100 µA), and majority of these works were focused on unidirectional TS selector characteristics, which remarkably limit the bipolar applications. [15][16][17][18] In this work, we demonstrated a bidirectional TS characteristic in ZrO 2 -based ECM devices by adopting the volatility of the conductive filaments and an proper programming operation Stable TS properties were confirmed even under high compliance currents, which are beneficial to practical large-scale integration applications This CMOS-compatible TS behavior presents great potential for selector applications in crossbar arrays.…”

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confidence: 79%

“…to oxidize the filament atoms, the filament may rupture spontaneously before the negative reset voltage is applied. Actually, volatile threshold switching (TS) characteristics have been frequently observed in some switching materials, such as La1-xSrxMnO3, 13 TaOx, 15 SiO2, 16 TiO2 17 and ZrO2/TiO 2 . 18 This volatile property can be utilized as a selector in series with a memory device to suppress the sneak path problem in high density crossbar arrays.…”

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confidence: 99%

“…Moreover, the concentration gradient between the filament and the surrounding matrix as well as the Rayleigh instability effect were also proposed to interpret the volatile behavior in resistive switching memories. 13,15,19 We believed that these effects may play some role in our devices while further detailed studies are needed to clarify the underling physics.…”

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confidence: 99%

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Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Wang

et al. 2016

AIP Advances

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A bidirectional threshold switching (TS) characteristic was demonstrated in Ag/ZrO2/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼107 by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag+ ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO2/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.

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confidence: 79%

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confidence: 99%

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confidence: 99%

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Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Wang

et al. 2016

AIP Advances

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“…Moreover, a thin interfacial layer has already been associated to resistive switching volatility due to ions self diffusion in oxide systems. 10 The equation describing the net ion current under the action of an external electric field is stated as follows: 31…”

Section: Discussionmentioning

confidence: 99%

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

Cortese

Trapatseli

Khiat

et al. 2016

Journal of Applied Physics

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Resistive switching (RS) and Resistive Random Access Memories (ReRAMs) that exploit it have attracted huge interests for next generation non volatile memory (NVM) applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the RS between two different resistive states, usually High (HRS, High resistive state) and Low(LRS, Low Resistive State) is an intrinsic non-volatile phenomenon with the two states thermodynamically stable. Titanium Dioxide is one of the most common materials known to show non-volatile RS. In this paper we report the first observed volatile resistive switching (VRS) in a Titanium Dioxide thin film. The aim of this paper is to study and understand the VRS phenomenon to give an extensive picture of its underlying Physics. A possible exploitation of the VRS could be in access devices in ReRAM crossbar arrays.

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“…17 When the ECM device is programmed under a low current compliance, the unstable filament is formed. 18,19 Accordingly, the spontaneous selfrupturing of the unstable filament occurs as the applied bias voltage removing, which leads to a TS behavior. 20 The metallic filament is considered to be formed by migrating of metal ions from the oxidizable electrode toward the inert electrode when a positive bias voltage is applied to the oxidizable electrode.…”

confidence: 99%

Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size

Wang

Zeng

2018

AIP Advances

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Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

Cited by 77 publications

References 12 publications

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size

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