A Cu/TaO x /Pt resistive cell can transition from a high-resistance state to a low-resistance state by applying positive or negative SET voltages. The SET operation with positive bias is due to the electrochemical formation of a Cu conductive filament (CF), whereas the SET operation with negative bias is attributed to the electroreduction of solid electrolyte and formation of an oxygen vacancy V O CF. Both CFs can be reset by Joule heating. Since SET voltages of the V O CF have higher absolute values than those of the Cu CF, the switching based on Cu and V O CFs can be decoupled within the same device. The device is inherently an antiparallel resistive switch circuit that can be consecutively switched between the Cu and V O CFs. Index Terms-Antiparallel resistive switch (APS), conductive filament (CF), oxygen vacancy.
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