Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Du, Gang; Wang, Chao; Li, Hong Xia; Mao, Qinan; Ji, Zhenguo

doi:10.1063/1.4961709

Cited by 37 publications

(34 citation statements)

References 36 publications

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“…Zirconia : ZrO x has also been frequently employed as the dielectric of CBRAM . As shown in Figure j, Du et al reported Pt/ZrO 2 /Ag stack with an evaporated dielectric and a sputtered Ag top electrode showing bidirectional threshold switching upon preconditioning.…”

Section: Methodsmentioning

confidence: 99%

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

259

231

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Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.is applied due to the formation of a conduction channel(s) with Ag or Cu atoms. Unlike the ECM cells, the resistance recovers back spontaneously upon cessation of the external bias, yielding a superior I-V nonlinearity [4][5][6][7][8][9][10][11] and unique temporal conductance evolution dynamics. [7,12,13] Such a relaxation process is due to the physical dissolution of the metallic conduction channel under driving forces such as minimization of interfacial energy. In case active metals are used as electrodes, these metals may be doped into the dielectrics eventually under the combined effect of electric fields, thermal diffusion, which may lead to a reduced threshold voltage for the subsequent switching, similar to the process called "electroforming." The unique delay and relaxation dynamics of Ag and Cu-based threshold switches make them suitable for innovative applications in circuits and systems.Threshold switches with Ag or Cu active metals are also termed as "diffusive memristors" [7] to emphasize the underlying nature of the diffusive dynamics of the metal species. Factors including bias amplitude, biasing duration, as well as ambient temperature have been observed to have an impact on such a process, showing a wide range of dynamical properties, which could be exploited as access devices for memories with fast transition (e.g., <100 ns) or synaptic emulators with a relatively slower evolution (e.g., >1 µs). We survey the recently developed material systems which have exhibited this kind of threshold switching. New evidences by electron microscopy and quantitatively thermodynamic modeling are examined to give insights into the underlying physics of the mechanisms. We also discuss applications enabled by the advent of such threshold switches. Temporal Response of the SwitchingThe dynamical response of threshold switching is a critical property for many applications but has been characterized to a lesser extent. The temporal responses could be probed by applying voltage pulses and measuring the resulting currents in the time domain. It is a general observation in both ECM and threshold switches that the conductance experienced a transition from insulating state to conducting state after a finite time duration (delay time) under the external bias, as ill...

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Section: Methodsmentioning

confidence: 99%

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

259

231

View full text Add to dashboard Cite

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“…6,7 Due to the thermal diffusion of the active ions under conditions of an imposed electric eld, the temporal and special evolution of the metallic bridge conducted the conductance evolution process in such devices. 8,9 Applying a voltage to set the device, the device converts from a HRS into a LRS when reaching to a certain voltage namely the threshold voltage (V th ). Whereas retracing the voltage sweep, the device returns to a HRS at a certain voltage namely the hold voltage (V h ).…”

Section: Introductionmentioning

confidence: 99%

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

Zhao

Yang

et al. 2019

Nanoscale Adv.

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“…can be roughly grouped into oxides (such as SiO 2 , [17,21] HfO 2 , [18,23] TiO 2 , [19] ZnO, [20] CuO, [14] CoO, [22] ZrO 2 , [24] NbO x , [25] and VO 2 [26] ), 2D materials (e.g., h-BN, [13] WSe 2 , [16] MoS 2 , [27] and MoS 2 / graphene [35] ), perovskites (e.g., Cs 3 Sb 2 Br 9 [32] and MAPbI 3 [33] ), chalcogenides (such as AsTeSi, [29] GeTe, [30] and GeTe 8 [28] ), and others (e.g., PEDOT:PSS, [34] ferritin [31] ).…”

Section: Methodsmentioning

confidence: 99%

Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications

Wang

Yang

Mao

et al. 2020

Advanced Intelligent Systems

119

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Due to the rapid development of artificial intelligence (AI) and internet of things (IoTs), neuromorphic computing and hardware security are becoming more and more important. The volatile memristors, which feature spontaneous decay of device conductance, own the distinct combination of high similarity to the biological neurons and synapses and unique physical mechanisms. They are excellent candidates for mimicking the synaptic functions and ideal randomness source of the entropy for hardware‐based security. Herein, the recent advances of volatile memristors in devices, mechanisms, and application aspects are summarized. First, a brief introduction is presented to describe the switching type, materials, and temporal response of volatile memristors. Second, the volatile switching mechanisms are discussed and grouped into ion effects, thermal effects, and electrical effects. Third, attention is focused on the applications of volatile memristors for access devices, neuromorphic computing (artificial neurons and synapses), and hardware security (true random number generators and physical unclonable functions). Finally, major challenges and future outlook of volatile memristors for neuromorphic computing and hardware security are discussed.

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Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Cited by 37 publications

References 36 publications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications

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