Visualization of MeV ion impacts in Si using scanning capacitance microscopy

Vines, Lasse; Monakhov, Edouard; Svensson, B. G.; Jensen, Jens; Hallén, Anders; Kuznetsov, A. Yu.

doi:10.1103/physrevb.73.085312

Cited by 14 publications

(6 citation statements)

References 51 publications

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“…active defects. These electrically active defects produced in Si can result in pinning of the Fermi level to a dominant deep level [7,8]. There are numerous studies on the defects produced by low energy ion implantation in silicon [9][10][11][12][13][14][15][16], but defects induced by irradiation using high energy heavy ion are not studied extensively.…”

Section: Introductionmentioning

confidence: 99%

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Kumar¹,

Katharria²,

Kanjilal³

2008

J. Phys. D: Appl. Phys.

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The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 ± 0.01 eV after irradiation at a fluence of 1 × 1011 ions cm−2 and remains immune to further irradiation up to a fluence of 1 × 1012 ions cm−2. A combination of in situ deep level transient spectroscopy and current–voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

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Section: Introductionmentioning

confidence: 99%

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Kumar¹,

Katharria²,

Kanjilal³

2008

J. Phys. D: Appl. Phys.

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“… 23 Each cascade shows formation of point defects confined to a relative narrow region of about 30 nm diameter. 7 According to the simulations, the projected range for 1.85 MeV Ge ions in ZnO is found to be 830 nm deep. In addition, Fig.…”

Section: Methodsmentioning

confidence: 92%

“…, by transmission electron microscopy (TEM). 7–9 These ion tracks have been used to nanostructure materials, 4 fabricate microfilters and nanopore templates, 10 and are important for the study of radiation resistance of materials. 2,11,12 However, single ion tracks formed by ions with an energy where the nuclear stopping prevails are less studied, and typically using indirect methods, 13 although some studies in, e.g.…”

Section: Introductionmentioning

confidence: 99%

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Optical signatures of single ion tracks in ZnO

et al. 2020

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The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depthresolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques.The results indicate that ZnO is susceptible to implantation doses as low as 10 8 to 10 9 cm À2 . We demonstrate that the intensity ratio of ionized and neutral donor bound exciton emissions [D + X/D 0 X] can be used as a tracer for a local band bending both at the surface as well as in the crystal bulk along the ion tracks. The hyperspectral CL imaging performed at 80 K with 50 nm resolution over the regions with single ion tracks permitted direct assessment of the minority carrier diffusion length. The radii of distortion and space charge surrounding single ion tracks were estimated from the 2D distributions of defect-related green emission (GE) and excitonic D + X emission, both normalized with regard to neutral D 0 X emission, i.e., from the [GE/D 0 X] and [D + X/D 0 X] ratio maps. Our results indicate that single ion tracks in ZnO can be resolved up to ion doses of the order of 5 Â 10 9 cm À2 , in which defect aggregation along the extended defects obstructs signatures of individual tracks. Fig. 7 (a) Total CL intensity map at 80 K of the 5E9 sample and the corresponding (b) [D + X/D 0 X] and (c) [GE/D 0 X] ratio maps. (d) CL contrast and [GE/D 0 X] ratio profiles along the dashed line indicated in the panel (a). (e) NBE spectra from the region A and sections B and C marked in (c).This journal is

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Section: Introductionmentioning

confidence: 99%

Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

Huang

Igarashi

Woné

et al. 2009

jjap

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The formation and evolution of defects induced by 100 MeV Si 7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 ± 0.01 eV after irradiation at a fluence of 1 × 10 11 ions cm −2 and remains immune to further irradiation up to a fluence of 1 × 10 12 ions cm −2 . A combination of in situ deep level transient spectroscopy and current-voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

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Visualization of MeV ion impacts in Si using scanning capacitance microscopy

Cited by 14 publications

References 51 publications

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Optical signatures of single ion tracks in ZnO

Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

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