Swift heavy ion irradiation-induced defects and electrical characteristics of Au/n-Si Schottky structure

Abstract

The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au/n-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 ± 0.01 eV after irradiation at a fluence of 1 × 1011 ions cm−2 and remains immune to further irradiation up to a fluence of 1 × 1012 ions cm−2. A combination of in situ deep level transient spectroscopy and current–voltage measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

“…Afterward, the I R decreases as the ion fluence increases and a value of 3.8 × 10 −5 A is measured after irradiation with 1 × 10 13 ions cm −2 , which is about one-fourth of the value of without irradiation. These results are new compared to reported irradiation studies in silicon devices where irradiation results in a decreased value of ϕ B and increased I R up to a critical ion fluence and at the higher irradiation fluences, these parameters saturated [11,16,20,24]. These results indicate that the Schottky barrier characteristics at the Pd/n-Si interface is improved after irradiation at higher fluence.…”

“…This exposure to radiation and energetic ions can modify the MS interface, which will lead to the modified barrier parameters and the transport properties 3 Author to whom any correspondence should be addressed. [11][12][13]. Therefore, irradiation studies with energetic ions are extremely helpful to simulate the device's performance in a radiation ambiance.…”

Ion beam induced surface and interface engineering

“…They also performed irradiation on same diode by using 100 MeV Si 7+ ion and observed that the Schottky barrier decreases after irradiation at a fluence of 1 × 10 11 ions cm −2 and remains immune to further irradiation up to a fluence of 1 × 10 12 ions cm −2 . A combination of insitu deep level transient spectroscopy and I-V measurements of Au/n-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the SBH and the leakage current in the irradiated structure [547]. The group has also carried out the in-situ I-V and C -V characterization.…”