Defect characterization in 1.2 MeV Ar8+ irradiated polycrystalline ZnO has been carried out by x-ray diffraction (XRD), scanning electron microscopy (SEM) along with electrical resistivity, and photoluminescence (PL) measurements at room temperature (RT). Interestingly, irradiation with the initial fluence (1×1015 ions/cm2) changes the color of the sample from white to orange while the highest irradiation fluence (5×1016 ions/cm2) makes it dark reddish brown that appears as black. XRD study reveals no significant change in the average grain size of the samples with irradiation fluence. Increase in surface roughness due to sputtering is clearly visible in SEM with highest fluence of irradiation. RT PL spectrum of the unirradiated sample shows intense ultraviolet (UV) emission (∼3.27 eV) and less prominent defect level emissions (2–3 eV). The overall emission is largely quenched due to initial irradiation fluence. Increasing the fluence of Ar beam further, UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This is due to an increase in donor concentration as well as their mobility induced by high fluence of irradiation. Change in color in the irradiated samples indicates dominant presence of oxygen vacancies. It is now well known that oxygen vacancies are deep donors in ZnO. So oxygen vacancies, in principle, are not the source of conductivity in ZnO at RT. Simultaneous evolution of coloration and conductivity in ZnO, as is seen in this study, indicate that oxygen vacancies strongly influence the stability of shallow donors, presumably zinc interstitial related (highly mobile Zn interstitials also need to form defect pair/complex to be stable), which act as major source of carriers. Such a contention is in conformity with most recent theoretical calculations.

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Pristine and irradiated Raman and PL spectra of pure and Co-doped ZnO nanocrystals.

Scanning Kelvin probe microscopy has been used to understand the modification of work function of TiO2 with swift heavy ion irradiation. The observed increase in contact potential difference (CPD) indicates a shift in Fermi level towards the valence band, which is due to the development of defects during the bombardment of high energy heavy ions. The change in CPD values on ion irradiation is attributed to electronic excitation induced defect concentration and surface roughness.

A unique strategy for scavenging free radicals in situ on exposure to gamma irradiation in polyethylene (PE) nanocomposites is presented. Blends of ultra-high molecular weight PE and linear low-density PE (PEB) and their nanocomposites with graphene (GPEB) were prepared by melt mixing to develop materials for biomedical implants. The effect of gamma irradiation on the microstructure and mechanical properties was systematically investigated. The neat blend and the nanocomposite were subjected to gamma-ray irradiation in order to improve the interfacial adhesion between PE and graphene sheets. Structural and thermal characterization revealed that irradiation induced crosslinking and increased the crystallinity of the polymer blend. The presence of graphene further enhanced the crystallinity via crosslinks between the polymer matrix and the filler on irradiation. Graphene was found to scavenge free radicals as confirmed by electron paramagnetic resonance spectroscopy. Irradiation of graphene-containing polymer composites resulted in the largest increase in modulus and hardness compared to either irradiation or addition of graphene to PEB alone. This study provides new insight into the role of graphene in polymer matrices during irradiation and suggests that irradiated graphene-polymer composites could emerge as promising materials for use as articulating surfaces in biomedical implants.