Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation

Komoda, Tsugikazu; Kelly, James; Cristiano, F.; Nejim, A.; Hemment, P.L.F.; Homewood, K. P.; Gwilliam, R.; Mynard, J.E.; Sealy, B.J.

doi:10.1016/0168-583x(94)00525-7

Cited by 81 publications

(41 citation statements)

References 10 publications

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“…[1][2][3][4] The process of making Si nanocrystals by Si ion implantation into thermal SiO 2 films on Si, followed by precipitation, [5][6][7] is fully compatible with standard integrated circuit technology and the SiO 2 matrix is a robust host that provides good passivation for the Si nanocrystals. Previously, we have demonstrated that SiO 2 films containing Si nanocrystals made by ion implantation show photoluminescence in the visible and near-infrared that can be attributed to two distinct sources.…”

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confidence: 99%

“…These samples were subsequently annealed at 1100°C for 10 min in vacuum at a base pressure below 3ϫ10 Ϫ7 mbar to induce nucleation and growth of Si nanocrystallites. [5][6][7] Oxidation was performed in flowing O 2 (flow rateϭ47 sccm) at 1000°C and at 1 atm for times ranging from 0 to 30 min. Finally, 600 eV deuterium was introduced into all samples to quench the defect related luminescence by means of implantation using a Kauffman ion source, 6 and the Si nanocrystal luminescence was optimized by a subsequent anneal at 400°C for 10 min.…”

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Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Brongersma

Polman

Min

et al. 1998

Applied Physics Letters

229

120

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Si nanocrystals ͑diameter 2-5 nm͒ were formed by 35 keV Si ϩ implantation at a fluence of 6 ϫ10 16 Si/cm 2 into a 100 nm thick thermally grown SiO 2 film on Si ͑100͒, followed by thermal annealing at 1100°C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O 2 at 1000°C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO 2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 s for the unoxidized film to 43 s for the film that was oxidized for 29 min. © 1998 American Institute of Physics. ͓S0003-6951͑98͒03220-3͔The recent discovery of visible light emission from nanocrystalline group IV materials has stimulated considerable experimental effort to understand its origin and utilize it to fabricate Si-based optoelectronic devices.1-4 The process of making Si nanocrystals by Si ion implantation into thermal SiO 2 films on Si, followed by precipitation, 5-7 is fully compatible with standard integrated circuit technology and the SiO 2 matrix is a robust host that provides good passivation for the Si nanocrystals. Previously, we have demonstrated that SiO 2 films containing Si nanocrystals made by ion implantation show photoluminescence in the visible and near-infrared that can be attributed to two distinct sources. One luminescence feature is related to ion irradiation induced defects in the SiO 2 matrix and can be quenched by introducing H or D into the film. 6 The other has been attributed to radiative recombination of quantum-confined excitons in the Si nanocrystals. We have also shown that the nanocrystal luminescence intensity can be increased by as much as a factor of 10 by annealing a deuterated sample at 400°C, which is attributed to the passivation of dangling bonds at the nanocrystal/SiO 2 interface.6 Previously, it has been shown that the luminescence from Si nanocrystals in SiO 2 can be continuously redshifted by thermal annealing, due to an increase in the crystallite size. In this letter, we demonstrate that the photoluminescence ͑PL͒ peak wavelength from Si nanocrystals embedded in an SiO 2 film can be blueshifted by more than 200 nm by thermal oxidation at 1000°C. Transmission electron microscopy ͑TEM͒ and Rutherford backscattering spectrometry ͑RBS͒ measurements show the oxidation of Si particles starts near the surface of the SiO 2 film and as time progresses, an oxidation front moves deeper into the film. The PL blueshift is attributed to a decrease in the average nanocrystal size as the oxidation progresses, in agreement with quantum c...

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confidence: 99%

mentioning

confidence: 99%

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Brongersma

Polman

Min

et al. 1998

Applied Physics Letters

229

120

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“…Shimizu-Iwayama et aL [2] presented data of room temperature luminescence from 1 Mev Si' implanted fused silica. Komoda et aL [3] observed a band centered . at 600 nm, and a red shift that was interpreted as due.…”

Section: Introductionmentioning

confidence: 99%

Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation

et al. 1996

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The annealing behavior of silicon implanted Si02 layers is studied using continuous and timegated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 "C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 ps -0.3 ms).

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“…However, because of the growing concern over environmental issues, light emitting diodes (LEDs) using Si have recently been investigated. For example, in the visible region, porous Si [68] , silicon/silicon dioxide (Si/SiO 2 ) superlattice structures [69,70] , and Si nanoprecipitates in SiO 2 [71] have been used, and in the infrared region, erbium-doped Si [72] and silicon-germanium (Si-Ge) [73] have been used. However, their emission effi ciencies are still lower than 1 % [74] .…”

Section: Electrical To Optical Energymentioning

confidence: 99%

Dressed photon technology

Ohtsu

2012

Nanophotonics

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This paper reviews the theoretical picture of dressed photons used to describe the electromagnetic interactions between nanometric particles located in close proximity to each other. The coupling between a dressed photon and multi-mode coherent phonons is also presented, revealing the presence of a novel phonon-assisted process in light -matter interactions. Applications of this novel process to innovative optical devices, fabrication technologies, energy conversion, and hierarchical systems are demonstrated.

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Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation

Cited by 81 publications

References 10 publications

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Annealing Studies of Visible Light Emission from Silicon Nanocrystals Produced by Implantation

Dressed photon technology

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