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Visible light emission from Si ϩ implanted SiO 2 layers as a function of different annealing conditions ͑temperature, time and ambient͒ is studied. It is shown that a 560 nm band, present in as implanted samples, increases its intensity for increasing annealing temperatures and is still observed after annealing at 1000°C. The emission time is fast ͑0.5-2 ns͒. A second band centered at 780 nm is detected after annealing at 1000°C. The intensity of the 780 nm band further increases when hydrogen annealing was performed. The emission time is long ͑1s-0.3 ms͒. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed.

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