We report the observation of visible-light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue-light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at high temperature (T≥1000 °C). The red-light emission, present only in the highest fluence implant, is attributed to the luminescence emitted from silicon nanocrystals produced by silicon precipitation. The presence of silicon nanocrystals is confirmed by transmission electron microscopy. Significant blue-light emission is visible after thermal annealing in the 1×1017 cm−2 fluence implant. The peak position shifts from 490 to 540 nm by increasing the annealing cycles temperature.

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Articles you may be interested inThermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium

Visible light emission from Si ϩ implanted SiO 2 layers as a function of different annealing conditions ͑temperature, time and ambient͒ is studied. It is shown that a 560 nm band, present in as implanted samples, increases its intensity for increasing annealing temperatures and is still observed after annealing at 1000°C. The emission time is fast ͑0.5-2 ns͒. A second band centered at 780 nm is detected after annealing at 1000°C. The intensity of the 780 nm band further increases when hydrogen annealing was performed. The emission time is long ͑1s-0.3 ms͒. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed.

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