Visible–NIR photodetectors based on CdTe nanoribbons

Xie, Xing; Kwok, So-Ying; Lu, Zhenzhen; Liu, Yankuan; Cao, Yulin; Luo, Lin‐Bao; Zapien, Juan Antonio; Bello, I.; Lee, Chun‐Sing; Lee, Shuit‐Tong; Zhang, Wenjun

doi:10.1039/c2nr30277b

Cited by 104 publications

(93 citation statements)

References 36 publications

(34 reference statements)

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“…The existence of defects may derive from the surface vacancy, as reported in our previous work [25]. The same phenomenon had been observed in studies on CdS nanobelts [37] and CdTe nanoribbons [38]. In addition, the quantum efficiency (QE) is a critical parameter in evaluating a photosensitive device, which relates to the number of electron–hole pairs excited by one absorbed photon, and can be used to determine the efficiency of electron transport and collection by electrodes.…”

Section: Resultssupporting

confidence: 81%

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Kuo

Lin

et al. 2013

Nanoscale Res Lett

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Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.

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Section: Resultssupporting

confidence: 81%

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Kuo

Lin

et al. 2013

Nanoscale Res Lett

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“…CdS NWs and nanobelts are among the most studied photoconductors in group II-VI for visible and ultraviolet light detection [89]. In the visible-NIR range (400-800 nm), CdTe nanoribbons with p-type conductivity present significant photoresponse to irradiation with a high responsivity of 7.8 × 10 2 A/W [101].…”

Section: Photoconductor Nw Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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“…4 PbS and CdTe have been used in visible wavelength photodetection. 1,5 Hg 1−x Cd x Te and CuIn 1−x Al x Se 2 have been used as IR photo detectors and in photovoltaic applications. 2,3,6 However the high cost and rarity of indium and tellurium as well as the toxicity of cadmium and lead are issues of concern fuelling the need for the lookout for alternative materials.…”

Section: Introductionmentioning

confidence: 99%

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

Dias

Krupanidhi

2016

AIP Advances

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The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm−1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 μA to a current of 1.78 μA at 1.05 suns and 8.7 μA under 477.7 mW/cm2 IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 × 1010 Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 × 1010 Jones respectively at 477.7 mW/cm2 IR illumination. The transient photoresponse was measured both for visible and IR illuminations.

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Visible–NIR photodetectors based on CdTe nanoribbons

Cited by 104 publications

References 36 publications

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Emerging technologies for high performance infrared detectors

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

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