No abstract

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal-insulator-metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.

To elucidate low-dimensional effects on thermoelectric materials, bismuth telluride film and nanowires array were fabricated by potentiostatically electrodeposition. Both materials are slightly Te-rich, n-type Bi2Te3, exhibiting preferred orientation in rhombohedral strcture. For both the Seebeck coefficient S ≈ −70 μV/K at 300 K decreases linearly with decreasing temperature, showing a diffusive nature of current flow. The temperature dependence of resistivity (=1/σ) of nanowires obtained from the data of a nanowires array and a single-nanowire reveals a better electric conductivity than that of the bulk. By coupling temperature-dependent thermal diffusivity and heat capacity data with a modified effective medium theory, a thermal conductivity κ of 0.75 W/(m K) was obtained at 300 K. The ZT was calculated to be 0.45 at 300 K and 0.9 at 350 K for Bi2Te3 nanowires.