Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

Abstract

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metal-insulator-metal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.

Multistate resistive switching in silver nanoparticle films

“…Like other filament-based resistive switching systems such as metal-oxide thin films [18] a forming step was required to activate the nanoparticle assemblies. The forming step creating the initial filamentary substructures that are responsible for conduction was executed by applying 7–9 V, 5 Hz sine wave voltage sweeps across the film (figure 1(b)).…”

Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures

“…The trap-controlled SCLC describes the charge trapping and detrapping, which is consistent with the Schottky effect, where the migration of oxygen vacancies in the vicinity of interfaces drives resistive switching. 20 The two oxide heterostructures studied in this letter have three different interfaces: two metal/oxide interfaces and one oxide/oxide interface. To explore the effect of every interface, the ZnO and ZrO 2 single layer samples were fabricated for comparison.…”

“…Comparing to the HRS of the Pt (bottom)/ZrO 2 /ZnO/Pt (top) structure, the HRS of the Pt (bottom)/ZnO/ZrO 2 /Pt (top) structure is more close to that of Pt/ZnO/Pt, demonstrating that the switching process originates from the change of the ZnO/ZnO 1Àx proportion, similar to the homogeneous resistive switching behavior of Pt/ZnO/Pt device. 20 The ZrO 2 layer remains oxygendeficient state (ZrO 2Àx ) with little change throughout the switching process. This may be because the ZnO/ZnO 1Àx / ZrO 2Àx multilayer is basically a serially connected resistance, the external voltage is mainly distributed to the oxygen rich ZnO layer, and the one distributed to the ZrO 2Àx layer is too small to change it.…”

Bistable Electrical Switching Characteristics and Memory Effect by Mixing of Oxadiazole in Polyurethane Layer

“…Then, for the HRS of the devices, the log I−log V plot shows an Ohmic conduction behavior at the low voltage region, namely, a linear proportion (with the slope of 1.09 and 1.07 for set process, and 1.09 and 1.13 for reset process), for current to voltage gradually changes to the Child's law region (with the slope of 2.08 and 2.03 for set process, and 2.05, 2.11, and 2.02 for reset process) at the high voltage region, for which the current is proportional to the square of the voltage. 39 In terms of the trap-controlled space charge limited conduction (SCLC) conduction, the I−V curve first follows Ohm's law at low bias and then Child's law at high bias. Indeed, for the LRS (as shown in Figure 6), Ohmic behavior (I ∝ V) is followed by Child's law behavior (I ∝ V 2 ), suggesting a change from the trap-unfilled SCLC conduction to the trap-filled SCLC conduction.…”