Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures

Xu, Zedong; Yu, Lina; Xu, Xiaoguang; Miao, Jun; Jiang, Yong

doi:10.1063/1.4878402

Cited by 51 publications

(33 citation statements)

References 21 publications

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“…2b . These modes are dependent on device structure [ 44 , 45 , 83 ] and electrical operation setup [ 31 , 84 ]. However, coexistence of bipolar and unipolar in the same device was also reported [ 85 – 88 ].…”

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

“…The conduction is determined by the field-induced change of the Schottky barrier height at the electrode/storage material interface [ 42 , 44 ]. Interface-type device can be designed by sandwiching the storage material with Ohmic and Schottky contacts [ 43 , 91 ] or modulating oxide/oxide interface in multilayer device [ 83 ].…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…1,2 Resistive switching effects have been intensively investigated in a large variety of materials, especially binary metal oxides, e.g., Ta x O, ZnO, TiO 2 , HfO x , ZrO 2 . [3][4][5][6][7][8] And many explanations of the switching mechanisms has been proposed recently. [9][10][11] However, practical application of large-scale high-performance RRAM arrays and architectures still face significant challenges.…”

Section: Introductionmentioning

confidence: 99%

“…Recent researches about RRAM devices based on bilayer oxide films indicate they may provide better performance over single-layer based devices. 8,10,[12][13][14][15] In addition, using bilayer materials as the switching media makes the role of each layer to be designed for a specific function during switching, thus offering large degrees of freedom for device optimization compared to usual methods of trying to get several functionalities in a single layer.…”

Section: Introductionmentioning

confidence: 99%

CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

Huang

Shen

et al. 2016

AIP Advances

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We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors. The two kinds of current-voltage curves reveal the different resistive switching behaviors in Pt/CuO/ZnO/Pt and Ag/CuO/ZnO/Pt, respectively. We conjecture that the formation and rupture of conducting filaments are responsible for the switching effect. Filaments induced by migration of oxygen ions are responsible for resistive switching with the Pt electrode. In contrast, resistive switching with the Ag electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. It is also inferred that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching voltages and cycling variations at room temperature.

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“…LSMO also exhibits nearly 100% spin polarized electronic transport which will give a bright future in the applications [14][15][16][17][18]. One important aspect is the magnetic tunnel junctions (MTJs), which consists of two normal FM metallic electrodes separated by a thin insulator barrier such as LMO and ZrO 2 [19][20][21][22][23][24]. The tunneling magnetoresistance (TMR) is usually defined via the difference in resistances between the antiparallel and parallel arrangements of the electrodes' magnetic moments.…”

Section: Introductionmentioning

confidence: 99%