Visible-Blind UV/IR Photodetectors Integrated on Si Substrates

Starikov, D.; Boney, J.; Pillai, R.; Bensaoula, A.

doi:10.1557/proc-0934-i09-04

Cited by 4 publications

(6 citation statements)

References 9 publications

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“…The main origin of the degradation of the efficiency of such devices is the presence of defects. Many researchers have reported dual band devices [3,4], and in particular dual band AlGaN/Si detectors [5][6][7][8]. In this work we show that the measured spectral response indicates reasonable spectral selectivity of the device in the UV and the near IR bands [5].…”

Section: Introductionsupporting

confidence: 56%

“…Many researchers have reported dual band devices [3,4], and in particular dual band AlGaN/Si detectors [5][6][7][8]. In this work we show that the measured spectral response indicates reasonable spectral selectivity of the device in the UV and the near IR bands [5]. Our aim is also to present a detailed investigation of electrically active defects present in the photodetectors based on Al-GaN/Si by using DLTS technique.…”

Section: Introductionmentioning

confidence: 66%

“…The active nitrogen species is generated by an EPI Uni-Bulb radio-frequency (RF) plasma source. The growth temperature typically varies between 740 o C and 800 o C. After the growth, UV Schottky diodes and IR Schottky diodes are fabricated [5][6][7][8] on the surface of AlGaN and on the back side of the silicon material, respectively, in a vertically aligned fashion (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

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Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE

Aziz

Mari

Felix

et al. 2012

Phys. Status Solidi C

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This paper is based on the investigation of electrically active defects in dual band UV/IR photodiodes using Deep Level Transient Spectroscopy (DLTS). The UV/IR photodiodes were fabricated by growing Al0.7Ga0.3N layers on silicon substrate to obtain UV‐ sensitive photodiode structures on the front side, whereas on the back side of silicon IR‐sensitive photodiode structures were fabricated. Our studies reveal the existence of two defect levels in each detector. In order to determine accurately the position of these levels within the band gap of the respective layers, Laplace DLTS has been employed. The activation energies of defects in the UV photodetectors are 0.11±0.01 eV, and 0.31±0.01 eV, whereas, those in the IR detector are 0.25±0.01 eV and 0.47±0.02 eV. These energies are with respect to the conduction band energy of each detector. The effect of the junction electric field on the carrier emission rates of the deep traps was investigated by applying the double pulse Laplace DLTS technique. In particular it is found that the activation energy of the defect in the IR detector (0.47±0.02 eV) changes with electric field. Therefore, in this paper we will present detailed DLTS and Laplace DLTS investigations of deep traps in detectors based on AlGaN/Si (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

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Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE

Aziz

Mari

Felix

et al. 2012

Phys. Status Solidi C

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“…Following growth, UV Schottky diodes and IR Schottky diodes are fabricated [26][27][28][29] on the surface of Al x Ga 1-x N and back side of silicon respectively, in a vertically aligned fashion (Figure 1). …”

Section: Iiexperiments Imentioning

confidence: 99%

“…description of actual structures and their fabrication steps are given in detail in earlier published results [27][28][29]. In the present work, the heterostructures were optimized by implementing tunneling barriers and by taking into account the constraints applicable to III nitride materials at different doping levels.…”

mentioning

confidence: 99%

Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

et al. 2009

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Employment of layered structures made of semiconductor materials with different optical absorption bands is a new way of realizing either broad band spectrum or selective multiple band photodetectors. A new concept of structures fabricated using stacked semiconducting layers to obtain a multi band spectral response is reported. Based on this approach, fabrication of a Solar-blind dual-band UV/IR photodetectors is demonstrated. Optimization of the device was carried out by modeling of the electric field distribution and developing tunneling barriers. The optimized Solarblind UV/IR photodiode UV spectral response turns-on approximately around 265 nm (solar-blind) and peaks at 230 nm with a responsivity of approximately 0.0018 A/W. The IR diode response peaks at 1000nm with a responsivity of approximately 0.01 A/W. I.IntroductionBinary and Ternary III-Nitride materials are gaining more interest in the field of imaging given their tunable direct band gap properties ranging from 6.2eV [1, 2] to 0.7eV [3]. They are superior to other materials due to their high thermal, chemical, mechanical, and radiation tolerance. Several groups have dedicated a large amount of research to the development of UV detectors based on GaN [4-10], GaN/AlGaN [11][12][13], and AlGaN [14]. Currently, attracting the most interest are AlGaN-based structures since they allow detection in the very important UV range of 240-280 nm, which corresponds to the absorption of solar radiation by the ozone layer [15] and InGaN-based structures absorbing in the 1.75-2.5eV range important for advanced solar cell development.The importance of infrared detection, which was initially motivated by night vision and thermal sensing, took a big leap with the boom of the telecommunication optical fiber industry. Recently, Ge y Sn 1-y [16] alloys were used as photoconductors for detection of wavelengths at 1.55μm. Conventional HgCdTe-[17] and InSb-based IR detectors display high quantum efficiencies, but are difficult to integrate into large arrays. Detectors based on heterointernal photoemission (HIP) in Ge x Si 1-x /Si heterojunctions have demonstrated excellent opportunities for integration on Si wafers at sufficient sensitivities in the infrared range of 1-12 μm [18][19][20][21]. Large area SiGe-based HIP photodetector arrays of 400x400 pixels have been available for close to ten years [22]. Metal silicide [23,25] based photodetectors have shown the extension of IR detection based on silicon. However, such devices are limited to operations under cooled conditions, such as cryogenic temperatures or even lower. The opportunity to grow IIINitrides on Si wafers is considered as one of the main approaches in the development of multi-color detectors for wavelengths ranging from the UV to IR.The major advantages of multi-band solid state photodetector structures is their potential integration into multi-pixel focal plane arrays (FPA) for imaging applications critical in recognition of various events that result in optical emission. This feature allows for added accuracy...

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Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy

Swaminathan

Grassman

Yang

et al. 2011

Journal of Applied Physics

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A monolithic, epitaxially-integrated, vertically-aligned, multi-band photodetector architecture has been demonstrated via the successful growth and fabrication of metamorphic back-to-back n-i-p/p-i-n In0.61Ga0.39P/In0.14Ga0.86As visible/near-IR dual-detector devices. The back-to-back diode design enables simultaneous and independent operation of detectors in both bands with low optical cross talk (<−10 dB outside the 690–720 nm range) and complete electrical isolation between the sub-detectors. The high electronic quality of the resultant metamorphic materials was confirmed via deep level transient spectroscopy, which revealed total trap concentrations of 5 × 1012 cm−3 for the In0.14Ga0.86As and 2 × 1014 cm−3 for the In0.61Ga0.39P sub-detectors, enabling low, room temperature reverse bias (−2 V) dark current densities of 4 × 10−8 A cm−2 and 7 × 10−12 A cm−2, respectively. High responsivity and specific detectivity values, at a working bias of −2 V, were measured: 0.41 A/W and 8.6 × 1011 cm Hz1/2/W for the In0.14Ga0.86As sub-detectors (at 980 nm), and 0.30 A/W and 2.0 × 1014 cm Hz1/2/W for the In0.61Ga0.39P sub-detectors (at 680 nm). The successful integration of high-quality lattice-mismatched materials, combined with the excellent sub-detector performances, demonstrate the potential for extending such a multi-band photodetector technology to achieve simultaneous detection of a wide range of wavelength bands with tunable cut-off wavelengths.

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Visible-Blind UV/IR Photodetectors Integrated on Si Substrates

Cited by 4 publications

References 9 publications

Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE

Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE

Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy

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