No abstract

Trace elements diffuse negligible distances through the pristine crystal lattice in minerals: this is a fundamental assumption when using them to decipher geological processes. For example, the reliable use of the mineral zircon (ZrSiO4) as a U-Th-Pb geochronometer and trace element monitor requires minimal radiogenic isotope and trace element mobility. Here, using atom probe tomography, we document the effects of crystal–plastic deformation on atomic-scale elemental distributions in zircon revealing sub-micrometre-scale mechanisms of trace element mobility. Dislocations that move through the lattice accumulate U and other trace elements. Pipe diffusion along dislocation arrays connected to a chemical or structural sink results in continuous removal of selected elements (for example, Pb), even after deformation has ceased. However, in disconnected dislocations, trace elements remain locked. Our findings have important implications for the use of zircon as a geochronometer, and highlight the importance of deformation on trace element redistribution in minerals and engineering materials.

Cd-Free CZTS solar cell with above 10% efficiency was achieved by an Al2O3 passivation layer prepared by ALD.

The application of pulsed ultrasound for the degradation of the nonvolatile surfactants sodium 4-octylbenzene sulfonate (OBS) and sodium dodecylbenzenesulfonate (DBS) was investigated at a frequency of 354 kHz. By comparing the degradation rate constants with those of continuous wave (CW) ultrasound, observed pulse enhancements were found to be dependent on the pulse length, pulse ratio, initial concentration, and surface activity of the surfactants. For a pulse length of 100 ms and a pulse ratio of 1:1 (equal on/off times), the degradation rate constant of 1 mM OBS was nearly twice the value for CW. Furthermore, the degradation rate constant for 1 mM DBS increased significantly when sonicated under a pulse length of 100 ms and a pulse on/off ratio of 1:50. However, the degradation rate of 0.1 mM OBS increased by only 30% with a 100 ms pulse length and pulse ratio of 1:1 as compared to CW, indicating concentration dependence. The enhanced degradation of surfactants by pulsed ultrasound was attributed to the accumulation of surfactants on cavitation bubble surfaces. In addition, as compared to shorter pulse intervals, longer pulse intervals enhanced DBS degradation, indicating that DBS, a more surface active compound, accumulated and equilibrated with the bubble interface more slowly.

GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which the formation of all heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins) were fully and simultaneously suppressed, as observed via transmission electron microscopy (TEM). This was achieved through a combination of intentional Si(100) substrate misorientation, Si homoepitaxy prior to GaP growth, and GaP nucleation by Ga-initiated atomic layer epitaxy. Unintentional (311) Si surface faceting due to biatomic step-bunching during Si homoepitaxy was observed by atomic force microscopy and TEM and was found to also yield defect-free GaP/Si interfaces. V