Very low frequency cyclostationary 1/f noise in MOS transistors

Arnaud, Alfredo; Miguez, Matías

doi:10.1109/icnf.2013.6578983

Cited by 6 publications

(9 citation statements)

References 9 publications

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“…In this case, we observe a whitening effect below the switching frequency just like the single trap setup. However, at lower frequencies, we observe "a re-appearance of noise" which is consistent with the measurements and simulations reported in the literature [11], [28]. This behavior of the noise PSD at very low frequencies is called resurgence of noise and investigated in detail in [28].…”

Section: F Limitations Of the Idealized Trap Modelsupporting

confidence: 91%

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Mahmutoglu

Demir

2015

IEEE Trans. Circuits Syst. I

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Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian et al. proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.Index Terms-Low-frequency noise, noise analysis, nonstationary noise, RTS noise.

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Section: F Limitations Of the Idealized Trap Modelsupporting

confidence: 91%

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Mahmutoglu

Demir

2015

IEEE Trans. Circuits Syst. I

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“…43 For example, in field-effect transistors, an external periodic potential is applied to reduce 1/f noise amplitude with the resulting noise spectra showing cyclostationary peaks at higher frequencies. 45 Here, an intrinsic cyclostationary process could contribute to the reduced SI/I 2 in Spiro 1 cells as compared to PTAA cells in the 1/f regime. While deep traps were implicated for cyclostationary processes in organic photovoltaics, they are unlikely to be the main contributor here because fmax is two orders of magnitude below the frequency range previously associated with bulk trap states in PSCs.…”

Section: Methodsmentioning

confidence: 79%

Low-Frequency Carrier Kinetics in Perovskite Solar Cells

Sangwan

Zhu

Clark

et al. 2019

ACS Appl. Mater. Interfaces

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Hybrid organic-inorganic halide perovskite solar cells have emerged as leading candidates for third-generation photovoltaic technology. Despite the rapid improvement in power conversion efficiency (PCE) for perovskite solar cells in recent years, the low frequency carrier kinetics that underlie practical roadblocks such as hysteresis and degradation remain relatively poorly understood. In an effort to bridge this knowledge gap, we perform here correlated low frequency noise (LFN) and impedance spectroscopy (IS) characterization that elucidates carrier kinetics in operating perovskite solar cells. Specifically, we focus on planar cell geometries with a SnO2

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“…Our model is based on the assumption that λ off T off >> 1, as λ off is very high for all traps. However, this condition need not be true for all traps, and thus all traps might not be affected uniformly in OFF condition during switching [31,32]. The distribution of λ off depends on a space dependent parameter 'm' [32].…”

Section: B Measurement Resultsmentioning

confidence: 99%

“…The other reason for the the discrepancy is the reappearance of the 1/f noise. This effect has been discussed in [29] - [32]. Our model is based on the assumption that λ off T off >> 1, as λ off is very high for all traps.…”

Section: Alyzedmentioning

confidence: 93%

“…In [29] and [30], an improved analysis of the RTS noise was presented for switched biasing, using square wave (50% duty cycle (D)) as input to a MOS transistor gate. In these and other papers on the low-frequency noise reduction [18][19][20][21][22][23][27][28][29][30][31][32][33] the transistors are switched with either 50% or 25% duty cycle and without multiple stages thereby leading to a discontinuous output.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

Jainwal

Sarkar

Shah

2018

IEEE J. Electron Devices Soc.

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Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/f noise. In a previous work, theoretical modelling and analysis of the RTS noise in MOS transistor was presented and it was shown that this 1/f noise can be reduced by decreasing the duty cycle (fD) of switched biasing signal. In this paper, an extended analysis of this 1/f noise reduction model is presented and it is shown that the RTS noise reduction is accompanied with shift in the corner frequency (fc) of the 1/f noise and the value of shift is a function of continuous ON time (Ton) of the device. This 1/f noise reduction is also experimentally demonstrated in this paper using a circuit configuration with multiple identical transistor stages which produces a continuous output instead of a discrete signal. The circuit is implemented in 180 nm standard CMOS technology, from UMC. According to the measurement results, the proposed technique reduces the 1/f noise by approximately 5.9 dB at fs of 1 KHz for 2 stage, which is extended up to 16 dB at fs of 5 MHz for 6 stage configuration. arXiv:1704.00876v1 [cond-mat.other]

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Very low frequency cyclostationary 1/f noise in MOS transistors

Cited by 6 publications

References 9 publications

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified

Low-Frequency Carrier Kinetics in Perovskite Solar Cells

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

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