Encapsulates are, in general, the passive components of any photovoltaic device that provides the required shielding from the externally stimulated degradation. Here we provide comprehensive physical insight depicting a rather non-trivial active nature, in contrast to the supposedly passive, atomic layer deposition (ALD) grown Al 2 O 3 encapsulate layer on the hybrid perovskite [(FA 0.83 MA 0.17 ) 0.95 Cs 0.05 PbI 2.5 Br 0.5 ] photovoltaic device having the configuration: glass/FTO/SnO 2 /perovskite/spiro-OMeTAD/Au/(6) Al 2 O 3 . By combining various electrical characterization techniques, our experimental observations indicate that the ALD chemistry produces considerable enhancement of the electronic conductivity of the spiro-OMeTAD hole transport medium (HTM), resulting in electronic modification of the perovskite/HTM interface. Subsequently, the modified interface provides better hole extraction and lesser ionic accumulation at the interface, resulting in a significant lowering of the burn-in decay and nearly unchanged charge transport parameters explicitly under the course of continuous operation. Unlike the unencapsulated device, the modified electronic structure in the Al 2 O 3 coated device is essentially the principal reason for better performance stability. Data presented in this communication suggest that the ionic accumulation at the spiro-OMeTAD/perovskite interface triggers the device degradation in the uncoated devices, which is eventually followed by material degradation, which can be avoided by active encapsulation.