The vast difference in timescale of carrier transport detected in perovskite solar cells is associated with different kinetics processes involving electron, defects and large cations, which determines the device performance and I–V hysteresis.

The analysis of perovskite solar cells by impedance spectroscopy has provided a rich variety of behaviors that demand adequate interpretation. Two main features have been reported: First, different impedance spectral arcs vary in combination; second, inductive loops and negative capacitance characteristics appear as an intrinsic property of the current configuration of perovskite solar cells. Here we adopt a previously developed surface polarization model based on the assumption of large electric and ionic charge accumulation at the external contact interface. Just from the equations of the model, the impedance spectroscopy response is calculated and explains the mentioned general features. The inductance element in the equivalent circuit is the result of the delay of the surface voltage and depends on the kinetic relaxation time. The model is therefore able to quantitatively describe exotic features of the perovskite solar cell and provides insight into the operation mechanisms of the device.

Small perturbation techniques have proven to be useful tools for the investigation of perovskite solar cells. A correct interpretation of the spectra given by impedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy (IMPS), and intensity-modulated photovoltage spectroscopy (IMVS) is key for the understanding of device operation. The utilization of a correct equivalent circuit to extract real parameters is essential to make this good interpretation. In this work, we present an equivalent circuit, which is able to reproduce the general and the exotic behaviors found in impedance spectra. From the measurements, we demonstrate that the midfrequency features that may appear to depend on the active layer thickness, and we also prove the spectral correlation of the three techniques that has been suggested theoretically.

Understanding the operation of neurons and synapses is essential to reproducing biological computation. Building artificial neuromorphic networks opens the door to a new generation of faster and lowenergy-consuming electronic circuits for computation. The main candidates to imitate the natural biocomputation processes, such as the generation of action potentials and spiking, are memristors. Generally, the study of the performance of material neuromorphic elements is done by the analysis of time transient signals.Here, we present an analysis of neural systems in the frequency domain by small-amplitude ac impedance spectroscopy. We start from the constitutive equations for the conductance and memory effect, and we derive and classify the impedance spectroscopy spectra. We first provide a general analysis of a memristor and demonstrate that this element can be expressed as a combination of simple parts. In particular, we derive a basic equivalent circuit where the memory effect is represented by an RL branch. We show that this ac model is quite general and describes the inductive/negative capacitance response in many systems such as halide perovskites and organic LEDs. Thereafter, we derive the impedance response of the integrate-and-fire exponential adaptative neuron model that introduces a negative differential resistance and a richer set of spectra. On the basis of these insights, we provide an interpretation of the varied spectra that appear in the more general Hodgkin−Huxley neuron model. Our work provides important criteria to determine the properties that must be found in material realizations of neuronal elements. This approach has the great advantage that the analysis of highly complex phenomena can be based purely on the shape of experimental impedance spectra, avoiding the need for specific modeling of rather involved material processes that produce the required response.

Current-voltage hysteresis of perovskite solar cells (PSCs) has raised the concern of accurate performance measurement in practice. Although various theories have been proposed to elucidate this phenomenon, the origin of hysteresis is still an open question. Herein, the use of guanidinium cation (Gu + )-dopant is demonstrated to tailor the crystal structure of mixed-cation formamidinium-cesium lead triiodide (FA 0.83 Cs 0.17 PbI 3 ) perovskite, resulting in an improved energy conversion efficiency and tunable current-voltage hysteresis characteristic in planar solar cells. Particularly, when the concentration of Gu-dopant for the perovskite film increases, the normal hysteresis initially observed in the pristine PSC is first suppressed with 2%-Gu-dopant, then changed to inverted hysteresis with a higher Gu-dopant. The hysteresis tunability behavior is attributed to the interplay of charge/ion accumulation and recombination at interfaces in the PSC. Furthermore, compared to the cell without Gu + -dopant, the optimal content of 2% Gu + -dopant also increases the device efficiency by 14%, reaching over 17% under one sun illumination.