Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance

Doan, Thi Hai Yen; Tran, C. A.; Chen, Chu; Chen, C.; Liu, W. H.; Chu, Jia Peng; Yen, Kuo-Yi; Chen, H.; Fan, Feng-Hsu

doi:10.1117/12.732903

Cited by 10 publications

(8 citation statements)

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“…In contrast, the vertical LEDs (VLEDs), which enable the wafer bonding of the p-type GaN on substrates such as silicon, silicon carbides, metals, and metal alloys for removing the sapphire substrate, have many advantages of better current injection without current crowding, excellent thermal dissipation, high light extraction, and good reliability [8][9][10][11][12]. For VLEDs, a laser lift-off (LLO) process has been often used to remove the sapphire substrate from the GaN epitaxial layer.…”

Section: Introductionmentioning

confidence: 99%

Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

Lee¹,

Lee²,

Yu³

et al. 2011

Semicond. Sci. Technol.

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We report the InGaN/GaN multiple quantum well vertical light-emitting diodes (VLEDs) operating at λ ∼ 450 nm by the use of laser lift-off and copper electroplating processes. The thermal characteristics of fabricated VLEDs are measured and analyzed in terms of the junction temperature (T j ) using the forward voltage method, which allows us to estimate the thermal resistance (R th ). Between 298 and 378 K, the characteristic temperature is measured to be about 903 K at 350 mA. The far-field patterns of the VLED have a uniform and good near-Lambertian emission. The T j and R th values are also confirmed by the emission peak wavelength shift method. The use of electroplated copper with a high thermal conductivity instead of a sapphire substrate provides much better heat dissipation capability. For a 1 × 1 mm 2 VLED, the low T j value of 305.8 K is obtained with an output power of 191 mW at an injection current of 350 mA at 298 K, exhibiting R th = 7.98 K W −1 .

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Section: Introductionmentioning

confidence: 99%

Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

Lee¹,

Lee²,

Yu³

et al. 2011

Semicond. Sci. Technol.

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“…In addition, the use of Cu substrate not only simplifies the electrode preparation, but also can suppress the current-crowding effect, because the vertical configuration of anode and cathode can yield uniform current spreading [see the inset of Figs. 3(b) and 3(c)] [15,16]. Now, let us briefly discuss the mode and formation mechanism of ZnO lasing.…”

Section: Resultsmentioning

confidence: 99%

“…Though these substrates have an epitaxial relationship with ZnO, their low thermal conductivity and high transparency bring some negative effects, such as poor heat dissipation and light loss in the direction of substrates. These problems can be mitigated by the use of metal substrates [14][15][16][17][18][19]. However, the device fabrication on metal substrates is very difficult because of thermal mismatch and lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

ZnO ultraviolet random laser diode on metal copper substrate

Liu¹,

Xu²,

Sun³

et al. 2014

Opt. Express

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Direct fabrication of light emitting devices on metal substrates is highly desirable due to their advantages of high thermal conductivity and light reflection. In this work, we demonstrated a feasibility of directly fabricating ZnO-based ultraviolet laser diodes on metal substrates. By introducing an anti-oxidation buffer layer, Au/MgO/ZnO metal-insulator-semiconductor heterojunction devices are successfully fabricated on the copper substrate. Electrically pumped ultraviolet random lasing was achieved from ZnO active layer. The use of copper substrate offers some merits, including lower thermal effect and higher stability of emission wavelength.

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“…Thus, lower forward operating voltage of VLEDs can be obtained, leading to a reduced thermal load. Doan et al found that the forward I–V curves of GaN-based VLEDs was steeper compared with the lateral structure, indicating a reduced series resistance [36]. A forward voltage of vertical LEDs around 4.5 V at 200 mA compared to 5.8 V for lateral LED on sapphire was reported by Cao et al [37].…”

Section: Introductionmentioning

confidence: 95%

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Zhang

Rong

et al. 2019

Micromachines

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β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.

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Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance

Cited by 10 publications

References 0 publications

Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

ZnO ultraviolet random laser diode on metal copper substrate

Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

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