ZnO ultraviolet random laser diode on metal copper substrate

Liu, C. Y.; Xu, Hai; Sun, Yan; G., J.; Liu, Y. C.

doi:10.1364/oe.22.016731

Cited by 49 publications

(17 citation statements)

References 25 publications

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“…Undoped ZnO typically usually acts as an n-type semiconductor, with a hexagonal wurtzite structure and lattice constants a=3.24 Å and c=5.20 Å [2]; it has attracted substantial considerable attention owing to its wide range of applications in, for example, light-emitting diodes [3], varistors [4], gas sensors [5], laser diodes [6], SAW devices and field emission (FE) devices [7][8]. ZnO nanostructures have been extensively investigated owing to their remarkable physical and chemical properties that can be exploited in various electronic devices and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Field emission properties of ZnO nanosheets grown on a Si substrate

Young

Lai

2015

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Field emission properties of ZnO nanosheets grown on a Si substrate

Young

Lai

2015

Microelectronic Engineering

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“…Moreover, their application in devices, such as field-effect transistors, 19,20 ultraviolet (UV) photosensors, 21,22 UV light-emitting diodes, 23 glucose sensors, 24,25 varistors, 26 gas sensors, 27 laser diodes, 28 surface acoustic wave (SAW) devices, 29 solar cells, 30,31 memory devices, 32,33 and field emission (FE) devices, 34 is promising. In recent years, FE devices have gained widespread attention for their application in flat-panel displays and other electronic devices, such as microwave amplifiers, high-brightness electron-source X-ray tubes, cathode-ray tube monitors, and electron microscopes.…”

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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“…So far, as gain materials, many studies on UV ZnO lasers have also been reported in various micro-/nano-cavity structures, such as random structures, [1][2][3][4][5][6][7][8][9][10][11][12][13] Fabry-Perot cavities, [14][15][16][17] whispering-gallery-mode resonators. [18][19][20][21] Although, in most of these ZnO lasers, the gain from electron-hole plasma (EHP) recombination under high excitation intensity condition has typically been reported as the origin of the stimulated emission (photon lasing), 12,13 the lasing originated by excitonic recombination, so-called polariton/exciton lasers, has also been demonstrated in well-designed cavity structures at room temperature.…”

confidence: 99%

“…In particular, because ZnO has the above-mentioned advantages and high gain, there are numerous studies on RLs so far. [1][2][3][4][5][6][7][8][9][10][11][12][13] In typical random structures, because localized modes are spontaneously formed and its modal control is difficult due to the multiple light scattering, the lasing peak wavelengths depend mainly on the property of gain materials and their thresholds are determined by the mean scattering property of the structure. Furthermore, the features of the RL (e.g., multimode lasing and high thresholds) make it difficult to realize strong interactions between cavity modes and gain materials and observe cavity-related phenomena, [21][22][23][24] like observed in well-designed resonators, as mentioned above.…”

confidence: 99%