Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs

Abstract

β-Ga2O3, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light emitting diodes). Large efforts have been made to improve the quality of III-Nitrides epilayers on β-Ga2O3. Furthermore, the fabrication of vertical blue LEDs has been preliminarily realized with the best result that output power reaches to 4.82 W (under a current of 10 A) and internal quantum efficiency (IQE) exceeds 78% by different groups, respectively, while there is nearly no demonstration of UV-LEDs on β-Ga2O3. In this review, with the perspective from materials to devices, we first describe the basic properties, growth method, as well as doping of β-Ga2O3, then introduce in detail the progress in growth of GaN on (1 0 0) and (−2 0 1) β-Ga2O3, followed by the epitaxy of AlGaN on gallium oxide. Finally, the advances in fabrication and performance of vertical structure LED (VLED) are presented.

Preparation Properties and Device Application of ?- Ga2O3: A Review

“…Within the spectral range of 210-280 nm, the photocurrent peak was 235 nm, which corresponds to the optimal range of light The maximum photoresponsivity was 259 A/W correspod 20 V, with rising and decay times of 0.02 seconds. Using PLD to manufacture a high-quality Ga 2 O 3 thin film, an improved solar-blind photodetector was described [79]. Film thickness can change the surface roughness of the film, but it has no effect on grain size.. At the same bias voltage, the photocurrent was 16 A.…”

van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward

“…Over the last few decades, with the research advancements in the established and matured technology of traditional three-dimensional (3D) semiconductors such as III-Nitrides, metal oxides, Si, etc., [1][2][3][4][5][6][7][8] high-performance state-of-the-art electronic devices have been successfully fabricated. However, further progress and developments in these devices are often limited due to the certain drawbacks encountered in these 3D semiconductors, for instance, low charge carrier mobility, presence of dangling bonds at the surface, low light absorption properties, etc.…”

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

“…Notably, various substrates such as sapphire (Al 2 O 3 ), magnesium oxide (MgO), yttriastabilized zirconia (YSZ), gallium arsenide (GaAs), and Si have been employed for the 2 of 12 heteroepitaxy of β-Ga 2 O 3 [8,9]. In particular, the c-plane (0001) sapphire has been widely employed as a substrate for β-Ga 2 O 3 because of its six-fold symmetry.…”